MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTP01N100D


MOSFET 0.1 Amps 1000V 110 Rds
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IXYS 354
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AUD 7.2896
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400 mA1 kV80 OhmsN - Channel 2 V- 55 C+ 150 C25 WThrough HoleTO - 220AB - 3TubeSi1 Channel20 V5.8 nCDepletion  
XP233N0501TR-G


MOSFET General-purpose N-channel MOSFET 30V 0.5A SOT-23
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Torex Semiconductor 353
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AUD 0.0815
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0.5 A30 V1.5 OhmsN - Channel 0.9 V + 150 C0.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V0.78 nCEnhancement  
TPM615PHY3


SOT-223 MOSFETs ROHS
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TECH PUBLIC 353
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AUD 0.3393
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ASB65R300E


700V 15A 300m 118W 3.5V TO-263 MOSFETs ROHS
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ANHI 353
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AUD 0.8046
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AOD9N40


Transistor: N-MOSFET; unipolar; 400V; 5A; 125W; TO252
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Alpha & Omega 353
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AUD 1.1994
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STI40N65M2


STMicroelectronics MOSFET
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STMicroelectronics 353
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AUD 3.3821
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32 A650 V87 mOhmsn - channel 2 V + 150 C250 Wthrough holeI2PAK - 3Tubesi1 channel25 V56.5 nCenhancement mdmesh
SUM70030E-GE3


MOSFET 100V Vds; 20V Vgs TO-263
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Vishay 353
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AUD 3.6063
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150 A100 V2.88 mOhmsN - Channel 2 V- 55 C+ 175 C375 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V214 nCEnhancement  
FDPC8014S


MOSFET PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET
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ON Semiconductor 352
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AUD 2.4215
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20 A25 V3.8 mOhmsN - Channel  - 55 C+ 150 C2.1 w , 2.3 WSmd/SmtPOWER 56 - 8ReelSi2 Channel    Powertrench Syncfet Power Clip
R6011KNX


MOSFET Nch 600V 11A Si MOSFET
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ROHM 352
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AUD 1.4431
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11 A600 V340 mOhmsN - Channel 3 V- 55 C+ 150 C53 WThrough HoleTO - 220FP - 3BulkSi1 Channel20 V22 nCEnhancement  
IRL630SPBF


MOSFET N-Chan 200V 9.0 Amp
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Vishay 0
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AUD 1.9209
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   N - Channel  - 55 C+ 150 C Smd/SmtD2PAKTube       
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