MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE30P30K


MOSFET P Trench 30V 30A 2.5V @ 250uA 18 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NCE Power 6984
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AUD 0.6871
Multiples of: 1

                   
TP5322K1-G


Transistor: P-MOSFET; unipolar; -220V; -0.7A; 360mW; SOT23-3
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Microchip 2910
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AUD 0.6069
Multiples of: 1

120 mA220 V12 OhmsP - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel- 10 V Enhancement  
UFZ24NL-F/TO-220


TO-220 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Unisonic 407
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AUD 0.3329
Multiples of: 5

                   
RS40N150T


TO-220 MOSFETs ROHS
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REASUNOS 407
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AUD 0.3986
Multiples of: 1

                   
IRFP1405PBF-JSM


TO-247 MOSFETs ROHS
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JSMSEMI 407
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AUD 1.1539
Multiples of: 1

                   
SUP90220E-GE3


MOSFET 200V Vds 20V Vgs TO-220AB
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Vishay 407
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AUD 2.0784
Multiples of: 1

64 A200 V18 mOhmsN - Channel 2 V- 55 C+ 175 C230 WThrough HoleTO - 220 - 3 Si1 Channel20 V48 nCEnhancement  
SI7164DP-T1-GE3


MOSFET 60V 60A 104W 6.25mohm @ 10V
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Vishay 407
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AUD 2.2051
Multiples of: 1

60 A60 V6.25 mOhmsN - Channel 2.5 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel10 V49.5 nCEnhancement Trenchfet
WML12N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 12A; 31W
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Wayon 400
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AUD 2.0478
Multiples of: 1

            Sj - Mosfet M3      
NTD3055L170T4G


60V 16.9A 73mO@10V,6.6A 41.7W N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 395
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AUD 0.3429
Multiples of: 1

                   
PSMN0R7-25YLDX


MOSFET PSMN0R7-25YLD/4 LEADS/REEL 7
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Nexperia 156
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AUD 1.4218
Multiples of: 1

300 A25 V570 uOhmsN - Channel 1.2 V- 55 C+ 150 C158 WSmd/SmtLFPAK56 - 4Cut TapeSi1 Channel10 V110.2 nCEnhancement  
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