MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFP4468PBF(TOKMAS)


100V 195A 520W 2.6m@10V,180A 1PCSNChannel TO-247 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Tokmas 411
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AUD 1.8021
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FCH165N60E


MOSFET 600V 23A N-Chnl SuperFET Easy-Drive
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ON Semiconductor 411
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AUD 5.9761
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23 A600 V165 mOhmsN - Channel 2.5 V- 55 C+ 150 C227 WThrough HoleTO - 247 - 3BulkSi1 Channel+/- 20 v , +/- 30 V57 nCEnhancement Superfet Ii
ISP98DP10LMXTSA1


MOSFET SMALL SIGNAL MOSFETS
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Infineon 410
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AUD 0.2167
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1.55 A100 V980 OhmsP - Channel 2 V- 55 C+ 150 C5 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V7.2 nCEnhancement  
DMP3007SFG-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 410
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AUD 0.5635
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         Smd/SmtPowerdi3333 - 8Cut TapeSi      
IPAW60R280P7SXKSA1


600V 12A 280mO@3.8A,10V 24W N Channel TO-220-FP MOSFETs ROHS
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Infineon 410
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AUD 0.834
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12 A600 V214 mOhmsN - Channel 3 V- 40 C+ 150 C24 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V18 nCEnhancement Coolmos
STW48N60M2


Transistor: N-MOSFET; unipolar; 600V; 26A; 300W; TO247
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STMicroelectronics 372
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AUD 3.1437
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            Mdmesh      
NTP190N65S3HF


MOSFET SUPERFET3 650V FRFET 190M
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ON Semiconductor 314
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AUD 4.0388
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20 A650 V190 mOhmsN - Channel 3 V- 55 C+ 150 C162 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V34 nCEnhancement Superfet Iii
IRFS9N60APBF


MOSFET RECOMMENDED ALT 844-IRFS9N60APBF
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Vishay 313
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AUD 2.048
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         Smd/SmtTO - 263 - 3TubeSi      
WMT07N06TS


Transistor: N-MOSFET; unipolar; SOT223
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Wayon 172
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AUD 0.2737
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AOD609


MOSFET N & P Trench 40V 12A 3V @ 250uA 30 mΩ @ 12A,10V TO-252-4 RoHS
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Alpha & Omega 52
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AUD 0.3784
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