MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STQ2HNK60ZR-AP


N-Channel 600 V 500mA (Tc) 3W (Tc) Through Hole TO-92-3
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STMicroelectronics 13580
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AUD 0.4578
Multiples of: 2000

500 mA600 V4.8 OhmsN - Channel  - 55 C+ 150 C3 WThrough HoleTO - 92 - 3TubeSi1 Channel30 V Enhancement Supermesh
TK8A65D(STA4,X,M)


ITO-220S-3 MOSFETs ROHS
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Toshiba 410
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AUD 1.2404
Multiples of: 1

                   
IRFI840GPBF


N-Channel 500 V 4.6A (Tc) 40W (Tc) Through Hole TO-220-3
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Vishay 410
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AUD 1.8597
Multiples of: 1

4.6 A500 V850 mOhmsN - Channel 2 V- 55 C+ 150 C40 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V67 nCEnhancement  
WMQ090NV6LG4


Transistor: N-MOSFET; unipolar; PDFN3030-8
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Wayon 409
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AUD 0.4075
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IPP60R280P6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
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Infineon 409
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AUD 1.5121
Multiples of: 1

            Coolmos P6      
SIHA12N60E-E3


MOSFET 650V .38ohm@10V MOSFET
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Vishay 409
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AUD 1.7896
Multiples of: 1

12 A650 V380 mOhmsN - Channel20 V4 V- 55 C+ 150 C33 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V58 nCEnhancement  
SUP10250E-GE3


MOSFET 250V Vds 20V Vgs TO-220
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Vishay 409
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AUD 4.3463
Multiples of: 1

63 A250 V25 mOhmsN - Channel 2 V- 55 C+ 175 C375 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V88 nCEnhancement Thunderfet
IRL540NSPBF-VB


100V 45A 30m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 409
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AUD 1.0885
Multiples of: 1

                   
SP40N02BGTD


40V 145A 2.6m 1 N-Channel TO-263 MOSFETs ROHS
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Siliup 408
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AUD 0.3546
Multiples of: 1

                   
IXTH88N30P


MOSFET 88 Amps 100 V 0.04 Ohms Rds
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IXYS 374
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AUD 14.4478
Multiples of: 1

88 A300 V40 mOhmsN - Channel  - 55 C+ 150 C600 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V Enhancement  
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