MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFS5C682NLAFT1G


MOSFET T6 60V NCH LL IN SO8FL
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ON Semiconductor 406
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between Mon. 17 Aug to Thu. 20 Aug
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AUD 0.9488

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IPA95R310PFD7XKSA1


MOSFETs Y
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Infineon 406
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between Fri. 07 Aug to Tue. 11 Aug
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AUD 2.2985

Multiples of: 1

8.7 A950 V310 mOhmsN - Channel 3.5 V- 55 C+ 155 C31 WThrough HoleTO - 220FP - 3TubeSi1 Channel- 30 V , + 30 V61 nCEnhancement  
PMDPB95XNE2X


MOSFET PMDPB95XNE2/HUSON6/REEL 7" Q1/
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Nexperia 405
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between Fri. 07 Aug to Tue. 11 Aug
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AUD 0.1996

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PSMB050N10NS2_R2_00601


MOSFETs 100V 5mohm Low FOM MOSFET
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Panjit 405
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between Fri. 07 Aug to Tue. 11 Aug
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AUD 1.7731

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R6030MNXC7


MOSFET N Trench 600V 30A (Tc) 5V @ 470uA 150 mΩ @ 15A,10V TO-220FM RoHS
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ROHM 405
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between Mon. 17 Aug to Thu. 20 Aug
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AUD 3.6666

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IPQC60R010S7XTMA1


MOSFETs Y
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Infineon 405
Ships to you
between Fri. 07 Aug to Tue. 11 Aug
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AUD 24.2328

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50 A600 V10 mOhmsN - Channel 4.5 V- 40 C+ 150 C694 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V318 nCEnhancement CoolMOS
SI4435DYTRPBF-HXY


30V 11A 16mΩ@10V 2.5V P Channel SOP-8 MOSFETs ROHS
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HXY MOS 404
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between Mon. 17 Aug to Thu. 20 Aug
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AUD 0.1489

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SIHG075N65E-GE3


MOSFETs N-CHANNEL 650V
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Vishay 404
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between Fri. 07 Aug to Tue. 11 Aug
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AUD 4.8104

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40 A650 V65 mOhmsN - Channel 5 V- 55 C+ 150 C250 WThrough HoleTO - 247AC - 3 Si1 Channel30 V132 nCEnhancement  
IPDQ60T017S7AXTMA1


MOSFETs AUTOMOTIVE_COOLMOS
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Infineon 404
Ships to you
between Fri. 07 Aug to Tue. 11 Aug
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AUD 15.0716

Multiples of: 1

113 A600 V17 mOhmsN - Channel 4.5 V- 40 C+ 150 C500 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V196 nCEnhancement  
ISC040N10NM7ATMA1


MOSFETs OptiMOS 7 PowerTransistor, 100 V
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Infineon 357
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between Fri. 07 Aug to Tue. 11 Aug
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AUD 1.5925

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130 A100 V4 mOhmsN - Channel 3.2 V- 55 C+ 175 C150 WSMD/SMTPG - TDSON - 8 Si1 Channel20 V39 nCEnhancement  
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