MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR320TRPBF


N-Channel 400 V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 1940
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AUD 0.709
Multiples of: 2000

3.1 A400 V1.8 OhmsN - Channel 2 V- 55 C+ 150 C42 WSmd/SmtDPAKReelSi1 Channel10 V20 nCEnhancement  
DTU09N03


30V 80A 5mO@10V,80A N Channel TO-252-3 MOSFETs ROHS
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VBsemi Elec 612
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AUD 0.3309
Multiples of: 1

                   
BUK9Y65-100E,115


MOSFET N-channel 100 V 65 mo FET
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Nexperia 604
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AUD 0.353
Multiples of: 1

19 A100 V51.4 mOhmsN - Channel 1.7 V- 55 C+ 175 C64 WSmd/SmtLFPAK56 - 5ReelSi1 Channel15 V14 nCEnhancement  
FQPF12N60C


Fairchild Semiconductor MOSFET 600V N-Ch Q-FET advance C-Series
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ON Semiconductor 604
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AUD 1.9231
Multiples of: 1

12 A600 V650 mOhmsn - channel30 V - 55 C+ 150 C51 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement  
IXTP120N20X4


MOSFETs 200V, 120A, Ultra junction X4, TO-220 package, MOSFET
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IXYS 604
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AUD 9.4075
Multiples of: 1

120 A200 V9.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C417 WThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , 20 V108 nCEnhancement  
IRF4104PBF


Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
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Infineon 603
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AUD 0.457
Multiples of: 1

            Hexfet®      
IPB019N06L3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
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Infineon 603
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AUD 2.7582
Multiples of: 1

            Optimos 3      
HSH4119


40V 150A 4.5m@10V,30A 200W 2.5V@250uA 1PCSPChannel TO-263 MOSFETs ROHS
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HUASHUO 602
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AUD 0.9533
Multiples of: 1

                   
IRFZ48SPBF


Vishay Semiconductors MOSFET N-Channel 60V Power MOSFET
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Vishay 517
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AUD 2.4463
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50 A60 V18 mOhmsN - Channel 2 V- 55 C+ 175 C190 WSmd/SmtD2PAK - 3ReelSi1 Channel+/- 20 V110 nCEnhancement Trenchfet
NTHL015N065SC1


MOSFET Silicon Carbide (SiC) MOSFET - 12 mohm, 650 V, M2, TO247-3L
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ON Semiconductor 2
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AUD 32.8969
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163 A650 V18 mOhmsN - Channel 4.3 V- 55 C+ 175 C643 WThrough HoleTO - 247 - 3TubeSiC1 Channel- 8 V , + 22 V283 nCEnhancement  
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