MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HAONR21321


-30V -50A 9m@10V,30A -1.2V@250uA 1PCSPChannel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 606
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AUD 0.2041
Multiples of: 5

                   
DMN2024U-7


null 6.8A 25mO@6.5A,4.5V 800mW null SOT-23 MOSFETs ROHS
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Diodes Incorporated 596
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AUD 0.2694
Multiples of: 5

           Cut TapeSi      
IPP034N08N5XKSA1


MOSFETs TRENCH 40<-<100V
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Infineon 596
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AUD 2.0851
Multiples of: 1

120 A80 V3.4 mOhmsN - Channel 3.8 V- 55 C+ 175 C167 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V69 nCEnhancement  
STF7N65M2


STMicroelectronics MOSFET
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STMicroelectronics 595
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AUD 0.9785
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5 A650 V1.15 Ohmsn - channel 3 V- 55 C+ 150 C20 Wthrough holeTO - 220 - 3Tubesi1 channel25 V9 nC  mdmesh
IRF9Z20PBF


MOSFET P-Chan 50V 9.7 Amp
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Vishay 595
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AUD 1.366
Multiples of: 1

   P - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3TubeSi      
DMTH4007SK3-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 594
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AUD 0.794
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         Smd/SmtTO - 252 - 3Cut TapeSi      
WSD20L75DN


MOSFET P Trench 20V 75A (Tc) 1V @ 250uA 6 mΩ @ 20A,4.5V DFN 3x3-8 RoHS
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Winsok 593
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AUD 0.4241
Multiples of: 1

                   
AGM310MA


30V 22A 1PCSNChannel+1PCSPChannel DFN(5x6) MOSFETs ROHS
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AGM-Semi 577
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AUD 0.186
Multiples of: 5

                   
HYG015N03LS2C2


30V 140A 1.5mΩ@10V,20A 65W 1.8V@250uA 9.2pF@25V N Channel 3011pF@25V 21.1nC@4.5V -55℃~+175℃@(Tj) DFN5x6-8L MOSFETs ROHS
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HuaYi 557
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AUD 0.375
Multiples of: 5

                   
CSD18502Q5B


N-Channel 40 V 26A (Ta), 100A (Tc) 3.2W (Ta), 156W (Tc) Surface Mount 8-VSON-CLIP (5x6)
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Texas Instruments 534
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AUD 3.1173
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204 A40 V3.3 mOhmsN - channel20 V1.8 V- 55 C+ 150 C3.2 WSmd/smtVSON - CLIP - 8ReelSi1 Channel20 V52 nC  Nexfet
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