MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD088N06N3GBTMA1


Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO252-3
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Infineon 621
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AUD 1.3466
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            optimos 3      
IRFU4510PBF


MOSFET 100V 64A 14.5mOhm HEXFET 140W 50nC
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Infineon 594
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AUD 1.2627
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63 A100 V13.9 mOhmsN - Channel    143 WThrough HoleIPAKTubeSi 20 V14 nC  Strongirfet
IRF1010ZPBF


Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; TO220AB
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Infineon 594
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AUD 1.4251
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            Hexfet®      
IRF9Z14SPBF


MOSFET P-Chan 60V 6.7 Amp
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Vishay 593
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AUD 0.6472
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   P - Channel  - 55 C+ 175 C Smd/SmtD2PAKTubeSi      
IPP120N20NFD


Infineon Technologies MOSFET N-Ch 200V 84A TO220-3
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Infineon 593
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AUD 3.4313
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84 A200 V10.6 mOhmsN - Channel 3 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3Tube-1 Channel+/- 20 V65 nCEnhancement Optimos
SI2307


30V 3A 68m 1.5V 1PCSPChannel SOT-23 MOSFETs ROHS
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PAKER Microelectronics 591
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AUD 0.0647
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TK30E06N1,S1X


Toshiba MOSFET N-Ch PWR FET 43A 53W 60V VDSS
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Toshiba 590
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AUD 0.8784
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43 A60 V15 mOhmsn - channel    53 Wthrough holeTO - 220 - 3 si1 channel10 V    
STW33N60M2


Transistor: N-MOSFET; unipolar; 600V; 16A; 190W; TO247
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STMicroelectronics 586
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AUD 2.0044
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            Mdmesh      
IRFB4110(UMW)


TO-220 MOSFETs ROHS
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Youtai 584
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AUD 0.6214
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DMP6023LFG-13


MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF
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Diodes Incorporated 550
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AUD 1.2787
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- 7.7 A- 60 V25 mOhmsP - Channel - 3 V- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel+/- 20 V53.1 nCEnhancement  
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