MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3403


MOSFET P Trench 30V 2.6A 1.4V @ 250uA 115 mΩ @ 2.6A,10V SOT-23-3L RoHS
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Alpha & Omega 32043
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AUD 0.106
Multiples of: 5

                   
NTP360N80S3Z


MOSFET MOSFET Power N-Channel SUPERFET III 800 V 13 A 360 mO TO-220 MOSFET Power N-Channel SUPERFET III 800 V 360 mO 13 A
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ON Semiconductor 585
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AUD 3.2343
Multiples of: 1

13 A800 V360 mOhmsN - Channel 3.8 V- 55 C+ 150 C96 WThrough Hole TubeSi1 Channel- 20 V , + 20 V25.3 nCEnhancement  
IPDQ60T022S7XTMA1


MOSFETs HIGH POWER_NEW
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Infineon 585
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AUD 12.1164
Multiples of: 1

90 A600 V22 mOhmsN - Channel 4.5 V- 40 C+ 150 C416 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V150 nCEnhancement CoolMOS
IXTH10P60


MOSFET -10 Amps -600V 1 Rds
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IXYS 585
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AUD 13.4463
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10 A600 V1 Ohmsp - channel 3 V- 55 C+ 150 C300 Wthrough holeTO - 247 - 3Tubesi1 channel10 V135 nCenhancement  
UJ4C075018K4S


N-Channel 750V 81A (Tc) 385W (Tc) Through Hole TO-247-4
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UnitedSiC 585
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AUD 22.77
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          TO - 247 - 4TubeSicfet (Cascode Sicjfet)      
FCPF190N65S3R0L


MOSFET SUPERFET3 650V 17A 190 mOhm
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ON Semiconductor 584
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AUD 1.8388
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17 A650 V190 mOhmsN - Channel 2.5 V- 55 C+ 150 C144 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V33 nCEnhancement  
IMZA120R030M1HXKSA1


MOSFETs CoolSiC 1200 V, 30 mohm SiC Trench MOSFET in TO-247-4 package
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Infineon 584
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AUD 15.4821
Multiples of: 1

           TubeSi      
SVF3878PN


MOSFET N Trench 900V 9A (Tc) 4.5V @ 250uA 1.28 Ω @ 4.5A,10V TO-3P RoHS
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Silan 583
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AUD 1.4201
Multiples of: 1

                   
PSMN9R5-100BS,118


NXP Semiconductors MOSFET N-CH 100 V 9.6 MOHM MOSFET
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Nexperia 583
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AUD 1.5022
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89 A90 V9.6 mOhmsN - Channel    211 WSmd/SmtTO - 252 - 3ReelSi1 Channel4.5 V    
CRJT99N65G2


TO-220 MOSFETs ROHS
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CRMICRO 579
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AUD 2.354
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