MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot VP0106N3-G


Transistor: P-MOSFET; unipolar; -60V; -0.5A; 1W; TO92
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Microchip 582
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AUD 0.9328
Multiples of: 1

250 mA60 V8 Ohmsp - channel 1.5 V- 55 C+ 150 C1 Wthrough holeTO - 92Bulksi1 channel- 10 V enhancement  
DMNH10H028SCT


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 582
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AUD 0.961
Multiples of: 50

         Through HoleTO - 220 - 3TubeSi      
FDPF18N20FT


MOSFET UniFET 200V
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ON Semiconductor 582
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AUD 1.2767
Multiples of: 1

18 A200 V120 mOhmsN - Channel  - 55 C+ 150 C41 WThrough HoleTO - 220FTubeSi1 Channel30 V   Unifet
Hot DN2535N3-G


Transistor: N-MOSFET; unipolar; 350V; 0.15A; 1W; TO92
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Microchip 582
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AUD 1.4056
Multiples of: 1

120 mA350 V25 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel20 V Depletion  
IRFZ44NLPBF


Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; TO262
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Infineon 582
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AUD 1.1377
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            Hexfet®      
FDPF33N25T


250V 33A 37W 94mO@10V,16.5A N Channel TO-220F-3 MOSFETs ROHS
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ON Semiconductor 582
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AUD 1.8657
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20 A250 V77 mOhmsN - Channel  - 55 C+ 150 C37 WThrough HoleTO - 220FTubeSi1 Channel30 V Enhancement  
STF26N60M2


MOSFET N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP package
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STMicroelectronics 582
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AUD 1.9349
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20 A650 V165 mOhmsN - Channel 2 V- 55 C+ 150 C30 WThrough HoleTO - 220FP - 3 Si1 Channel+/- 25 V-Enhancement  
FDP61N20


Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB
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ON Semiconductor 582
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AUD 2.2575
Multiples of: 50

            Unifet      
DN2540N5-G


MOSFET N Trench 400V 500mA (Tj) 25 Ω @ 120mA,0V TO-220 (TO-220-3) RoHS
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Microchip 582
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AUD 2.3507
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500 mA400 V25 OhmsN - Channel  - 55 C+ 150 C15 WThrough HoleTO - 220BulkSi1 Channel20 V Depletion  
AUIRLZ44Z


International Rectifier MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms
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Infineon 465
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AUD 1.6483
Multiples of: 1

51 A55 V22.5 mOhmsN - Channel    80 WThrough HoleTO - 220 - 3TubeSi1 Channel 24 nC Aec - Q101 
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