MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB65R150CFDAATMA1


MOSFET N-Ch 650V 72A D2PAK-2
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Infineon 582
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AUD 3.4149
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72 A650 V150 mOhmsN - Channel     Smd/SmtTO - 263 - 3Cut TapeSi1 Channel    Coolmos
STW48NM60N


Transistor: N-MOSFET; unipolar; 600V; 28A; 330W; TO247
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STMicroelectronics 582
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AUD 3.1775
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            Mdmesh      
STH275N8F7-6AG


STMicroelectronics MOSFET
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STMicroelectronics 582
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AUD 4.7463
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180 A80 V1.7 mOhmsn - channel 2.5 V- 55 C+ 175 C315 Wsmd/smtTO - 263 - 7Reelsi1 channel20 V193 nCenhancementaec - q101stripfet
STW40N65M2


STMicroelectronics MOSFET
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STMicroelectronics 582
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AUD 4.7957
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32 A650 V87 mOhmsN - Channel 2 V + 150 C250 WThrough HoleTO - 247 - 3ReelSi1 Channel25 V56.5 nCEnhancement Mdmesh
STH310N10F7-6


STMicroelectronics MOSFET N-Ch 100 V 2.1 mOhm 180 A STripFET
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STMicroelectronics 582
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AUD 4.8502
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180 A100 V2.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C315 WSmd/SmtH2PAK - 6ReelSi1 Channel20 V180 nCEnhancement Stripfet
STW21N90K5


Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; TO247
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STMicroelectronics 582
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AUD 5.2521
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            Mdmesh      
IPQC65R040CFD7XTMA1


MOSFETs 650V CoolMOS CFD7 SJ Power Device
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Infineon 582
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AUD 8.2418
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           Reel , Cut TapeSi     CoolMOS
R8019KNZ4C13


MOSFETs TO247 800V N CH 19A
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ROHM 582
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AUD 8.3075
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19 A800 V265 mOhmsN - Channel 4.5 V- 55 C+ 150 C208 WThrough HoleTO - 247G - 3TubeSi1 Channel30 V65 nCEnhancement  
STW12N120K5


Transistor: N-MOSFET; unipolar; 1200V; 7.6A; 250W; TO247
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STMicroelectronics 582
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AUD 9.0396
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            Mdmesh      
FDP2532


Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB
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ON Semiconductor 308
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AUD 3.9597
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