MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TN0604N3-G-P013


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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Microchip 608
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AUD 2.3077
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700 mA40 V1.6 OhmsN - Channel  - 55 C+ 150 C740 mWThrough HoleTO - 92 - 3Reel 1 Channel20 V Enhancement  
WMO13N10TS


Transistor: N-MOSFET; unipolar; TO252
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Wayon 607
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AUD 0.2633
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PXN6R7-30QLJ


MOSFET MOS DISCRETES
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Nexperia 607
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AUD 0.3366
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21.5 A30 V8.6 mOhmsN - Channel 2.2 V- 55 C+ 150 C4.8 WSMD/SMTSOT8002 - 1 - 8 Si1 Channel- 20 V , + 20 V24.8 nCEnhancement  
SPD09P06PL G


Infineon Technologies MOSFET P-Ch -60V 9.7A DPAK-2
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Infineon 607
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AUD 0.5467
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9.7 A- 60 V250 mOhmsP - Channel 2 V- 55 C+ 175 C42 WSmd/SmtDPAK - 3ReelSi1 Channel20 V14 nCEnhancement Sipmos
NTLUS3A39PZTAG


MOSFET T4S PCH 208V IN 1.6X1.6
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ON Semiconductor 607
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AUD 0.552
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5.2 A20 V39 mOhmsP - Channel    1.5 WSmd/SmtUDFN - 6Cut TapeSi1 Channel     
AOT8N50


Transistor: N-MOSFET; unipolar; 500V; 5.6A; TO220
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Alpha & Omega 607
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AUD 1.1701
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AOB27S60L


Trans MOSFET N-CH 600V 27A 3-Pin(2+Tab) D2PAK T/R
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Alpha & Omega 607
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AUD 4.1373
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27 A  N    357 WSurface Mount Tape And Reel    Enhancement  
IPB65R099CFD7AATMA1


MOSFET AUTOMOTIVE
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Infineon 607
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AUD 5.2024
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38 A650 V99 mOhmsN - Channel 3 V- 55 C+ 150 C278 WSMD/SMTTO - 263 - 3Coolmos , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V127 nCEnhancementAEC - Q101CoolMOS
IXFP6N120P


MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A
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IXYS 607
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AUD 10.4254
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6 A1.2 kV2.75 Ohmsn - channel 5 V- 55 C+ 150 C250 Wthrough holeTO - 220 - 3Tubesi 30 V92 nCenhancement hiperfet
IXFX150N30P3


MOSFET N-Channel: Power MOSFET w/Fast Diode
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IXYS 607
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AUD 27.106
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150 A300 V19 mOhmsN - Channel 3 V- 55 C+ 150 C1.3 mWThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , 20 V197 nCEnhancement HiPerFET
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