MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMC4040SSDQ-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 621
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AUD 0.6436
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           Cut Tape       
AOD450


Transistor: N-MOSFET; unipolar; 200V; 2.7A; 25W; TO252
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Alpha & Omega 618
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AUD 0.4629
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SI9926CDY-T1-E3


MOSFET 20V Vds 12V Vgs SO-8
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Vishay 618
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AUD 0.746
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8 A20 V18 mOhmsN - Channel 600 mV- 55 C+ 150 C3.1 WSmd/SmtSO - 8Cut TapeSi2 Channel4.5 V22 nCEnhancement Trenchfet
NVMFS6H824NT1G


MOSFET T8 80V SO8FL NCH S
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ON Semiconductor 618
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AUD 1.7386
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107 A80 V4.5 mOhmsN - Channel 2 V- 55 C+ 175 C115 WSmd/SmtDFN - 5Cut TapeSi1 Channel20 V38 nCEnhancementAec - Q101 
RX3G07BBGC16


MOSFETs RX3G07BBG is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.
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ROHM 617
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AUD 2.9552
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130 A40 V4.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C89 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V56 nCEnhancement  
TK25A60X5,S5X


N-Channel 600 V 25A (Ta) 45W (Tc) Through Hole TO-220SIS
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Toshiba 617
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AUD 3.9896
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25 A600 V120 mOhmsN - Channel 3 V- 55 C+ 150 C45 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V60 nCEnhancement Dtmosiv
IPDQ60T010S7AXTMA1


MOSFETs CoolMOS S7TA with embedded temperature sensor
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Infineon 616
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AUD 25.8418
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174 A600 V10 mOhmsN - Channel 4 V- 40 C+ 150 C694 WSMD/SMTPG - HDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V318 nCEnhancement CoolMOS
GT10N10


100V 7A 115mO 17W N Channel TO-252 MOSFETs ROHS
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GOFORD 606
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AUD 0.1304
Multiples of: 5

                   
Hot IRFB3207PBF


MOSFET N Trench 75V 170A 4V @ 250uA 4.5 mΩ @ 75A,10V TO-220 (TO-220-3) RoHS
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Infineon 592
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AUD 1.2499
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180 A75 V3.6 mOhmsN - Channel    330 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V180 nC   
SI4463BDY-T1-E3


MOSFET 20V 13.7A 0.011Ohm
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Vishay 372
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AUD 1.2246
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   P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
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