MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDB6670AL


Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R
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ON Semiconductor 872
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AUD 1.8364
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80 A30 V6.5 mOhmsN - Channel20 V - 65 C+ 175 C68 WSmd/SmtD2PAK - 3Reel    Enhancement  
IPA80R1K0CEXKSA2


TO-220-3 MOSFETs ROHS
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Infineon 628
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AUD 1.187
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 800 V       Through HoleTO - 220FP - 3TubeSi     Coolmos
FCPF13N60NT


TO-220F-3 MOSFETs ROHS
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ON Semiconductor 628
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AUD 1.5088
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13 A600 V258 mOhmsN - Channel 4 V- 55 C+ 150 C33.8 WThrough HoleTO - 220FTubeSi1 Channel30 V30.4 nC  Supremos
SUD40N10-25-E3


MOSFET RECOMMENDED ALT 781-SUD35N10-26P-GE3
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Vishay 628
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AUD 3.0532
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40 A100 V25 mOhmsN - Channel 1 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V40 nCEnhancement Trenchfet
DMG6602SVTQ-7


Diodes Incorporated MOSFET 30V Vds 20V Vgs Complmtry Enh FET
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Diodes Incorporated 627
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AUD 0.1922
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3.4 A , - 2.8 A30 v , - 30 V100 mOhms , 140 mOhmsN - Channel, P - Channel 1 v , - 2.3 V- 55 C+ 150 C1.27 WSmd/SmtTSOT - 26 - 6ReelSi2 Channel+/- 20 v , +/- 20 V9 nC , 7 nCEnhancementAec - Q101 
CS12N60FA9R


MOSFET N Trench 600V 12A (Tc) 4V @ 250uA 750 mO @ 6A,10V TO-220F (TO-220IS) RoHS
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Huajing 627
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AUD 0.6077
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NTMFS0D8N02P1ET1G


MOSFET FET 25V 0.8 MOHM SO8FL
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ON Semiconductor 627
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AUD 2.2985
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365 A25 V680 uOhmsN - Channel 2 V- 55 C+ 150 C139 WSMD/SMTDFN - 5Cut Tape , ReelSi1 Channel- 12 V , + 16 V52 nCEnhancement  
FDA16N50_F109


MOSFET 500V 16.5A NCH
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ON Semiconductor 627
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AUD 2.9388
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16.5 A500 V380 mOhmsn - channel  - 55 C+ 150 C205 Wthrough holeTO - 3PNTubesi1 channel30 V enhancement unifet
2SK1920-K-TL-E


Trans MOSFET N-CH Si 250V 4A
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ON Semiconductor 626
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AUD 0.8887
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                Enhancement  
STB11NK50ZT4


MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH
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STMicroelectronics 579
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AUD 2.0269
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10 A500 V480 mOhmsN - Channel  - 55 C+ 150 C125 WSmd/SmtD2PAKReelSi1 Channel30 V49 nCEnhancement  
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