MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPT020N13NM6ATMA1


MOSFETs N
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Infineon 8385
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AUD 5.1224
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           Reel , Cut TapeSi      
SUM10250E-GE3


MOSFET 250V Vds 20V Vgs D2PAK (TO-263)
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Vishay 776
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AUD 2.5933
Multiples of: 800

63.5 A250 V24.7 mOhmsN - Channel 2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3TubeSi1 Channel20 V88 nCEnhancement Trenchfet
SIR510DP-T1-RE3


MOSFET N-CHANNEL 100-V (D-S)
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Vishay 635
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AUD 3.0258
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VBA3316


MOSFET N Trench 30V 8.5A (Tc) 2.5V @ 250uA 16 mΩ @ 8A,10V SO-8 RoHS
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VBsemi Elec 624
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AUD 0.3077
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IRFZ10PBF


MOSFET N-Chan 60V 10 Amp
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Vishay 624
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AUD 1.0688
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3TubeSi      
PSMN4R0-30YLDX


MOSFET MOSFET N-CH 30V LFPAK
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Nexperia 622
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AUD 0.3546
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95 A30 V4 mOhmsN - Channel20 V1.74 V- 55 C+ 175 C64 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V9.1 nCEnhancement  
DMP4015SSS-13


Diodes Incorporated MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K
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Diodes Incorporated 614
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AUD 1.6029
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9.1 A40 V15 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.82 WSmd/SmtSO - 8ReelSi1 Channel- 10 V47.5 nCEnhancement  
MS4N1350E


1.5kV 4A 80W 5.8@10V,1.3A 6V@250A 1 N-Channel TO-263-2 MOSFETs ROHS
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MASPOWER 568
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AUD 1.9388
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NTLUS3A90PZTAG


MOSFET POWER MOSFET 20V 3A 60 MO
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ON Semiconductor 0
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AUD 0.3497
Multiples of: 1

      - 55 C+ 150 C1.5 WSmd/SmtUDFN - 6ReelSi      
FQPF17N40T


Fairchild Semiconductor MOSFET 400V N-Ch QFET
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ON Semiconductor 0
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AUD 2.0677
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9.5 A400 V270 mOhmsn - channel  - 55 C+ 150 C56 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement  
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