MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTP44P15T


MOSFET -44 Amps -150V 0.065 Rds
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IXYS 611
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AUD 5.9597
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44 A150 V65 mOhmsp - channel 4 V- 55 C+ 150 C298 Wthrough holeTO - 220 - 3Tubesi1 channel15 V175 nCenhancement  
FCP067N65S3


MOSFET 650V 44A N-Channel SuperFET MOSFET
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ON Semiconductor 611
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AUD 15.9174
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44 A650 V67 mOhmsN - Channel 2.5 V- 55 C+ 150 C312 WThrough HoleTO - 220 - 3BulkSi1 Channel+/- 20 V78 nCEnhancement Superfet Iii
JSM7788


30V 40A 4.5mΩ@10V,20A 36W 1.6V@250uA 232pF@15V N Channel 3.415nF@15V 24nC@10V -55℃~+150℃@(Tj) DFN(3x3)_EP MOSFETs ROHS
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JSMSEMI 610
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AUD 0.2891
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FDP047N10


MOSFET 100V N-Channel PowerTrench
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ON Semiconductor 610
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AUD 4.1744
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   n - channel  - 55 C+ 175 C through holeTO - 220 - 3Tube       
AO4407


30V 11.6A 12.5mO@10V,11.6A P Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 609
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AUD 0.4151
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SWB046R08E8T


80V 150A 4.8mΩ TO-263 MOSFETs ROHS
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Sam&wing 609
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AUD 0.5803
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RQ3L050GNTB


MOSFET Nch 60V 12A Si MOSFET
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ROHM 608
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AUD 0.6124
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12 A60 V43 mOhmsN - Channel 1 V + 150 C14.8 WSmd/SmtH SMT - 8Cut TapeSi1 Channel20 V5.3 nCEnhancement  
RCJ081N20TL


MOSFET 10V Drive Nch Power MOSFET
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ROHM 608
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AUD 0.7881
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8 A200 V550 mOhmsN - Channel 3.25 V- 55 C+ 150 C40 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel30 V8.5 nCEnhancement  
IPP076N15N5XKSA1


MOSFETs TRENCH >=100V
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Infineon 451
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AUD 2.7254
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112 A150 V7.6 mOhmsN - Channel 4.6 V- 55 C+ 175 C214 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V49 nCEnhancement  
NTMTS001N06CTXG


MOSFET T6 60V SG PQFN8x8 EXPANSI
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ON Semiconductor 83
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AUD 2.5776
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