MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MPG100N07P


TO-220 MOSFETs ROHS
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Minos 615
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AUD 0.2795
Multiples of: 5

                   
AOD484


TO-252 MOSFETs ROHS
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Youtai 611
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AUD 0.1253
Multiples of: 5

                   
LN06N060TZHG


60V 4.5A 60m 1PCSNChannel SOT-223 MOSFETs ROHS
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Leshan 611
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AUD 0.2881
Multiples of: 5

                   
AO4842


30V 8A 2W 15m@10V,8.0A 1.5V@250uA 2 N-Channel SOP-8 MOSFETs ROHS
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ElecSuper 606
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AUD 0.0645
Multiples of: 5

                   
SP85N04BHNK


PDFNWB-8L(5x6) MOSFETs ROHS
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Siliup 606
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AUD 0.2527
Multiples of: 5

                   
IPDQ60R040S7XTMA1


MOSFETs HIGH POWER_NEW
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Infineon 606
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AUD 6.994
Multiples of: 1

14 A600 V40 mOhmsN - Channel 4.5 V- 55 C+ 150 C272 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , 20 V83 nCEnhancement CoolMOS
IPAN60R280PFD7SXKSA1


MOSFET CONSUMER
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Infineon 605
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AUD 1.0688
Multiples of: 1

12 A600 V549 mOhmsN - Channel 4 V- 40 C+ 150 C24 WThrough HoleTO - 220 - 3 - FPTubeSi1 Channel- 20 V , + 20 V15.3 nCEnhancement  
CDM22010-650 SL


MOSFET N-Ch 10A PFC FET 650V 8.0nC 0.88Ohm
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Central Semiconductor 605
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AUD 1.7
Multiples of: 1

10 A650 V880 mOhmsN - Channel 2 V- 55 C+ 150 C156 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V20 nCEnhancement  
IRL540N(UMW)


100V 30A 24m@10V,15A 75W 2V@250uA 1 N-Channel TO-220-3L MOSFETs ROHS
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Youtai 602
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AUD 0.4419
Multiples of: 1

                   
IRFP460PBF


TO-247S MOSFETs ROHS
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OSEN 548
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AUD 0.9754
Multiples of: 1

                   
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