MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SUM110P04-04L-E3


MOSFET 40V 110A 375W 4.2mohm @ 10V
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Vishay 5432
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AUD 4.1045
Multiples of: 800

110 A40 V4.2 mOhmsP - Channel 1 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3ReelSi1 Channel- 10 V235 nCEnhancement Trenchfet
NTP5860NLG


Trans MOSFET N-CH 60V 220A 3-Pin(3+Tab) TO-220AB Rail
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ON Semiconductor 687
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AUD 0.8072
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           Rail/Tube    Enhancement  
STP100N10F7


STMicroelectronics MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W
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STMicroelectronics 687
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AUD 1.1652
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80 A100 V8 mOhmsN - Channel20 V2 v to 4 V- 55 C+ 175 C150 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V56 nC  Stripfet
IPB0401NM5S


MOSFETs TRENCH >=100V
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Infineon 687
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AUD 1.3873
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KNB3306C


TO-263 MOSFETs ROHS
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KIA 686
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AUD 0.4537
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BUK964R2-80E,118


NXP Semiconductors MOSFET N-Chan 80V 120A
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Nexperia 686
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AUD 2.9388
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120 A80 V4.2 mOhmsN - Channel10 V1.7 V- 55 C+ 175 C349 WSmd/SmtD2PAK - 3ReelSi1 Channel10 V123 nCEnhancement  
STF4N80K5


MOSFET N-CH 800V 2.1Ohm 3A Zener-protected
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STMicroelectronics 685
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AUD 1.036
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3 A800 V2.1 OhmsN - Channel30 V4 V- 55 C+ 150 C20 WThrough HoleTO - 220FP - 3TubeSi1 Channel30 V10.5 nCEnhancement Supermesh
IPP200N15N3 G


Infineon Technologies MOSFET N-Ch 150V 50A TO220-3 OptiMOS 3
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Infineon 685
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AUD 1.9866
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50 A150 V20 mOhmsN - Channel20 V2 V- 55 C+ 175 C150 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V23 nCEnhancement Optimos
DMP4013LFG-7


Diodes Incorporated MOSFET P-Ch 40V Enh Mode 60Vds 20Vgs 2569pF
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Diodes Incorporated 668
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AUD 0.6339
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13.7 A40 V13 mOhmsP - Channel 1 V- 55 C+ 150 C2.1 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel- 10 V68.6 nCEnhancement  
IRFB5615PBFXKMA1


MOSFETs TRENCH >=100V
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Infineon 648
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AUD 1.2264
Multiples of: 1

35 A150 V39 mOhmsN - Channel 5 V- 55 C+ 175 C144 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V26 nCEnhancement  
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