MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BRCS060N04YMQ


PDFN5x6A MOSFETs ROHS
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Blue Rocket 886
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AUD 0.4935
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IPB020N03LF2SATMA1


MOSFETs StrongIRFET 2 Power -Transistor, 30 V in DPAK
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Infineon 760
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AUD 1.54
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122 A30 V2.05 mOhmsN - Channel 2.35 V- 55 C+ 175 C136 WSMD/SMTTO - 263 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V33 nCEnhancement StrongIRFET
NVB5404NT4G


MOSFET NFET D2PK 40V 129A 4.5MOH
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ON Semiconductor 685
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AUD 2.3177
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167 A40 V4.5 mOhmsN - Channel     Smd/SmtTO - 263 - 3Cut TapeSi    Aec - Q101 
IPB120N06S4H1ATMA2


MOSFET N-Ch 60V 120A D2PAK-2
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Infineon 685
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AUD 3.103
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120 A60 V2.4 mOhmsN - Channel 4 V- 55 C+ 175 C250 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V270 nCEnhancementAec - Q101 
IXTH110N25T


MOSFET 110 Amps 250V
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IXYS 685
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AUD 10.3761
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110 A250 V24 mOhmsn - channel  - 55 C+ 150 C694 Wthrough holeTO - 247 - 3Tubesi1 channel20 V enhancement hiperfet
KNB2910A


MOSFET N Trench 100V 130A 4V @ 250uA 9 mΩ @ 10A,70V TO-263-2 RoHS
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KIA 685
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AUD 0.8616
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PMF63UNEX


MOSFET PMF63UNE/SC-70/REEL 7" Q1/T1 *
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Nexperia 684
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AUD 0.2988
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2.2 A20 V65 mOhmsN - Channel 450 mV- 55 C+ 150 C395 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel4.5 V3.9 nCEnhancement  
AUB033N08BG


85V 160A 3.3m 179W 3V TO-263 MOSFETs ROHS
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ANHI 684
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AUD 0.7254
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DMTH6010SK3Q-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 684
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AUD 0.857
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         Smd/SmtTO - 252 - 3Cut TapeSi    Aec - Q101 
IPD380P06NMATMA1


MOSFET TRENCH 40<-<100V
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Infineon 560
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AUD 2.0361
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35 A60 V38 mOhmsP - Channel 2.1 V- 55 C+ 175 C125 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V63 nCEnhancement  
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