MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTP86N20T


MOSFET 86 Amps 200V 29 Rds
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IXYS 682
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AUD 5.697
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86 A200 V29 mOhmsN - Channel 5 V- 55 C+ 175 C480 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V90 nCEnhancement HiPerFET
DMN52D0UVA-7


MOSFETs MOSFET BVDSS: 41V-60V SOT563 T&R 3K
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Diodes Incorporated 681
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AUD 0.11
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480 mA50 V2 OhmsN - Channel 490 mV- 55 C+ 150 C890 mWSMD/SMTSOT563 - 6Reel , Cut TapeSi2 Channel- 12 V , + 12 V1.5 nCEnhancement  
SP8M6HZGTB


MOSFETs AECQ
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ROHM 681
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AUD 0.9161
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5 A , 3.5 A30 V51 mOhms , 90 mOhmsN - Channel, P - Channel 2.5 V , 2.5 V- 55 C+ 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi2 Channel- 20 V , 20 V3.9 nCEnhancementAEC - Q101 
IRF1010EZS-VB


- MOSFETs ROHS
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VBsemi Elec 681
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AUD 1.03
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RS1L145GNTB


MOSFET NCH 60V 47A POWER
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ROHM 681
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AUD 1.6369
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47 A60 V9.7 mOhmsN - Channel 1.3 V- 55 C+ 150 C31 WSmd/SmtHSOP - 8Cut TapeSi1 Channel20 V37 nCEnhancement  
IPA80R1K4P7XKSA1


800V 4A 1.4O@1.4A,10V 24W N Channel TO-220-3-31 MOSFETs ROHS
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Infineon 680
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AUD 0.8521
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4 A800 V1.4 OhmsN - Channel 3 V- 55 C+ 150 C24 WSmd/SmtTO - 220 - 3TubeSi1 Channel30 V10 nCEnhancement Coolmos
IPB60R145CFD7


MOSFETs HIGH POWER_NEW
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Infineon 672
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AUD 3.5207
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DMT68M8LSS-13


MOSFET MOSFETBVDSS: 41V-60V
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Diodes Incorporated 652
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AUD 0.4656
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           Cut Tape       
AUIRF4905


International Rectifier MOSFET AUTO -55V 1 P-CH HEXFET 20mOhms
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Infineon 652
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AUD 5.1073
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- 74 A- 55 V20 mOhmsP - Channel20 V - 55 C 200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nCEnhancementAec - Q101 
JMTG3002B


PDFN-8(4.9x5.8) MOSFETs ROHS
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JieJie 651
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AUD 0.3832
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