MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSH0139


100V 35A 104W 50mΩ@10V,10A 2.5V@250uA P Channel TO-263 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HUASHUO 882
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AUD 0.6383
Multiples of: 1

                   
WGF10N50SE


TO-220F MOSFETs ROHS
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Wild Goose 688
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AUD 0.2297
Multiples of: 5

                   
YJQ30N03A


30V 30A 5.8mΩ@10V,15A 21W N Channel DFN-8(3.3x3.3) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Yangjie 688
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AUD 0.2404
Multiples of: 5

                   
NCE65T540I


MOSFET N Trench 650V 8A (Tc) 4V @ 250uA 540 mΩ @ 4A,10V TO-251 (I-PAK) RoHS
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NCE Power 688
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AUD 0.5604
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IRL60S216


MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg
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Infineon 688
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AUD 3.5215
Multiples of: 1

298 A60 V1.6 mOhmsN - Channel 1 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3ReelSi1 Channel+/- 20 V170 nCEnhancement Strongirfet
IPW60R060C7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 688
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AUD 7.2731
Multiples of: 1

35 A600 V52 mOhmsN - Channel 3 V- 55 C+ 150 C162 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V68 nCEnhancement Coolmos
IXFX80N50Q3


MOSFET Q3Class HiPerFET Pwr MOSFET 500V/80A
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IXYS 688
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AUD 42.3254
Multiples of: 1

80 A500 V65 mOhmsN - Channel 6.5 V- 55 C+ 150 C1.25 kWThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V200 nCEnhancement HiPerFET
IPAN60R210PFD7SXKSA1


650V 16A 210mO@4.9A,10V 25W N Channel TO-220-FP MOSFETs ROHS
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Infineon 679
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AUD 1.4201
Multiples of: 1

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AOD256


N-Channel 150 V 3A (Ta), 19A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount TO-252 (DPAK)
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Alpha & Omega 586
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AUD 0.4965
Multiples of: 1

19 A  N    83 WSurface Mount      Enhancement  
SPW20N60CFD


MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS CFD
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Infineon 0
6 to 16 Weeks Calender.png

AUD 4.1373
Multiples of: 1

20.7 A650 V220 mOhmsN - Channel  - 55 C+ 150 C208 WThrough HoleTO - 247TubeSi1 Channel20 V Enhancement Coolmos
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