MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPTC017N10NM5LF2ATMA1


MOSFETs OptiMOS 5 Linear FET 2, 100 V
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Infineon 2397
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AUD 4.9254
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321 A100 V1.7 mOhmsN - Channel 3.9 V- 55 C+ 175 C375 WSMD/SMTPG - HDSOP - 16Reel , Cut TapeSi1 Channel+ 20 V165 nCEnhancement OptiMOS 5
PSMN1R0-100CSFJ


MOSFETs SOT8000 100V 460A
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Nexperia 692
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AUD 8.8943
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460 A100 V1.04 mOhmsN - Channel 4 V- 55 C+ 175 C1.55 kWSMD/SMTSOT8005A - 12Reel , Cut TapeSi1 Channel- 20 V , + 20 V359 nCEnhancement  
SIZ998DT-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
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Vishay 691
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AUD 0.891
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20 A , 60 A30 V4.7 mOhms , 2.2 mOhmsN - Channel 1.1 V- 55 C+ 150 C20.2 w , 32.9 WSmd/SmtPowerpair - 6X5 - 8Cut TapeSi2 Channel- 16 v , 20 V18 nC , 44.3 nCEnhancement Trenchfet
HSP80N20


200V 80A 20mΩ@10V,30A 370W 4V@250uA null TO-220 MOSFETs ROHS
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HUASHUO 690
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AUD 1.3808
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IPP60R280CFD7XKSA1


MOSFET LOW POWER_NEW
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Infineon 690
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AUD 1.7403
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9 A600 V237 mOhmsN - Channel 3.5 V- 55 C+ 150 C52 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V18 nCEnhancement Coolmos
NVMFS5C628NWFT1G


MOSFET 60 V 3.0 mOhms 150 A
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ON Semiconductor 690
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AUD 2.1672
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           Cut Tape       
IXTT90P10P


MOSFET -90.0 Amps -100V 0.250 Rds
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IXYS 690
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AUD 17.4358
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90 A100 V25 mOhmsp - channel     smd/smtTO - 268 - 3Tubesi      
FDMS86540


MOSFET 60V N-Channel PowerTrench MOSFET
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ON Semiconductor 689
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AUD 0.5939
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20 A60 V3.4 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPOWER - 56ReelSi1 Channel20 V65 nCEnhancement Powertrench
TK10A60W5,S5VX(M


Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
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Toshiba 688
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AUD 2.6955
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BSC026NE2LS5


MOSFET TRENCH <= 40V
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Infineon 683
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AUD 1.0641
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