MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN020-30MLCX


MOSFET N-channel 30 V 18.1 mo FET
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Nexperia 1194
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AUD 0.22
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31.8 A30 V20.5 mOhmsN - Channel20 V1.62 V- 55 C+ 175 C33 WSmd/SmtLFPAK33 - 8ReelSi1 Channel20 V9.5 nCEnhancement  
IPQC60T017S7XTMA1


MOSFETs HIGH POWER_NEW
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Infineon 727
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AUD 14.7104
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113 A600 V17 mOhmsN - Channel 4.5 V- 40 C+ 150 C500 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V196 nCEnhancement CoolMOS
IPQC60T017S7AXTMA1


MOSFETs AUTOMOTIVE_COOLMOS
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Infineon 727
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AUD 15.0716
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113 A600 V17 mOhmsN - Channel 4.5 V- 40 C+ 150 C500 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V196 nCEnhancement  
IPP020N03LF2SAKSA1


MOSFETs TRENCH <= 40V
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Infineon 726
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AUD 1.3134
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125 A30 V2.05 mOhmsN - Channel 2.35 V- 55 C+ 175 C136 WThrough Hole TubeSi1 Channel- 20 V , + 20 V69 nCEnhancement StrongIRFET
RSU12N65F


650V 12A 420mΩ@10V,6A 31W null TO-220F MOSFETs ROHS
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REASUNOS 725
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AUD 0.6923
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IPDQ60R075CFD7XTMA1


MOSFETs Y
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Infineon 725
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AUD 4.991
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34 A650 V75 mOhmsN - Channel 4.5 V- 55 C+ 150 C219 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V51 nCEnhancement CoolMOS
HUFA75623S3ST-JSM


TO-263-2L MOSFETs ROHS
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JSMSEMI 724
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AUD 0.6462
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IPA95R450PFD7XKSA1


MOSFETs Y
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Infineon 724
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AUD 1.8224
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7.2 A950 V450 mOhmsN - Channel 3.5 V- 55 C+ 150 C30 WThrough HoleTO - 220FP - 3TubeSi1 Channel- 30 V , + 30 V43 nCEnhancement  
R6535KNX3C16


MOSFET 650V MOSFET
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ROHM 721
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AUD 6.6985
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35 A650 V115 mOhmsN - Channel 5 V- 55 C+ 150 C370 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V72 nCEnhancement  
IPB033N10N5LF


Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
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Infineon 666
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AUD 4.5072
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            Optimos 5      
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