MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQPF16N15


MOSFET 150V N-Ch QFET
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ON Semiconductor 731
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AUD 1.1463
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11.6 A150 V160 mOhmsN - Channel  - 55 C+ 175 C53 WThrough HoleTO - 220FTubeSi1 Channel25 V Enhancement Qfet
STU6N60M2


STMicroelectronics MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2
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STMicroelectronics 730
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AUD 0.8701
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4.5 A650 V1.2 Ohmsn - channel 3 V- 55 C+ 150 C60 Wthrough holeIPAK - 3Tubesi1 channel25 V8 nC  mdmesh
FDP3682


MOSFET 100V 32a .36Ohm/VGS=1V
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ON Semiconductor 730
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AUD 1.5905
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
IPP65R045C7


MOSFET 650V CoolMOS C7 Power Trans; 45mOhm
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Infineon 730
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AUD 9.1448
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46 A650 V45 mOhmsN - Channel20 V3 v to 4 V- 55 C+ 150 C227 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V93 nCEnhancement Coolmos
1HN04CH-TL-W


ON Semiconductor MOSFET NCH 120MA 100V SOT23
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ON Semiconductor 729
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AUD 0.3251
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270 mA100 V6 OhmsN - Channel 1.2 V- 55 C+ 150 C600 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V900 pCEnhancement  
G08P06D3


60V 8A 42mΩ 40W 3.5V@250uA P Channel DFN-8L(3x3) MOSFETs ROHS
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GOFORD 729
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AUD 0.4715
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NCEP016N85LL


TOLL MOSFETs ROHS
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Tokmas 729
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AUD 1.0913
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SI4403CDY-T1-GE3


MOSFET 1.8V P-Channel
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Vishay 718
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AUD 0.7268
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13.4 A20 V0.0155 OhmsP - Channel8 V- 1 V- 55 C+ 150 C5 WSmd/SmtSO - 8ReelSi1 Channel- 4.5 V90 nCEnhancement Trenchfet
NCEP023N10D


100V 240A 1.9mΩ@10V,120A 340W 3V@250uA N Channel TO-263-2 MOSFETs ROHS
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NCE Power 713
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AUD 2.5839
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CSD87330Q3D


Mosfet Array 2 N-Channel (Half Bridge) 30V 20A 6W Surface Mount 8-LSON (3.3x3.3)
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Texas Instruments 611
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AUD 1.2759
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20 A30 V N - channel 1 v , 750 mV- 55 C+ 150 C6 WSmd/smtSON - 8ReelSi2 Channel10 V4.8 nC , 9.6 nCEnhancement Nexfet
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