MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
JSM2302


20V 6A 26mΩ@4.5V,6A 1.25W 1.2V@250uA 80pF@15V N Channel 300pF@15V +150℃@(Tj) SOT-23 MOSFETs ROHS
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JSMSEMI 15035
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AUD 0.023
Multiples of: 50

                   
NTS4001NT1G


30V 300mA 313mW 1.5Ω@10V 1.6V@250uA N Channel SOT-323 MOSFETs ROHS
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MSKSEMI 6615
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AUD 0.052
Multiples of: 10

                   
RHU002N06T106


N-Channel 60 V 200mA (Ta) 200mW (Ta) Surface Mount UMT3
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ROHM 3618
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AUD 0.0502
Multiples of: 10

   N - Channel  - 55 C+ 150 C Smd/SmtUMT - 3Reel       
IPL60R285P7AUMA1


Transistor: N-MOSFET; unipolar; 600V; 8A; 59W; PG-VSON-4
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Infineon 729
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AUD 1.5416
Multiples of: 1

13 A600 V218 mOhmsN - Channel 3 V- 40 C+ 150 C59 WSMD/SMTVSON - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V18 nCEnhancement CoolMOS
IAUA250N08S5N018AUMA1


MOSFET MOSFET_(75V 120V(
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Infineon 729
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AUD 2.6433
Multiples of: 1

250 A80 V1.8 mOhmsN - Channel 3.8 V- 55 C+ 175 C238 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V96 nCEnhancement  
IPDQ60R025CFD7XTMA1


MOSFETs Y
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Infineon 729
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AUD 13.0851
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90 A650 V25 mOhmsN - Channel 4.5 V- 55 C+ 150 C446 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 30 V141 nCEnhancement  
IRFS4115TRLPBF


MOSFET N Trench 150V 195A 5V @ 250uA 12.1 mΩ @ 62A,10V TO-263-2 RoHS
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Infineon 729
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AUD 2.1932
Multiples of: 1

99 A150 V12.1 mOhmsN - Channel 5 V + 175 C375 WSmd/SmtD2PAKReelSi1 Channel 120 nC   
2N7002-13-F


MOSFET
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Diodes Incorporated 728
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AUD 0.046
Multiples of: 1

210 mA60 V13.5 OhmsN - Channel 2.5 V- 55 C+ 150 C540 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V223 pCEnhancement  
FQD4N25TM_WS


MOSFET 250V N-Channel QFET
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ON Semiconductor 728
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AUD 0.4679
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3 A250 V1.75 OhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtDPAKReelSi1 Channel30 V Enhancement  
SI2301-ES


20V 3A 1W 57m@4.5V,3A 700mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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ElecSuper 727
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AUD 0.0139
Multiples of: 50

                   
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