MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMTH6004SCTB-13


Diodes Incorporated MOSFET Enh Mode FET 41V to 60V TO263
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Diodes Incorporated 727
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AUD 1.5893
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100 A60 V2.9 mOhmsN - Channel 2 V- 55 C+ 175 C4.7 WSmd/SmtTO - 263 - 3Reel-1 Channel20 V95.4 nCEnhancement  
AUIRFSL8403


MOSFET Auto 40V N-Ch FET 2.6mOhm 123A
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Infineon 727
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AUD 1.6629
Multiples of: 1

123 A40 V3.3 mOhmsN - Channel20 V2.2 v to 3.9 V- 55 C+ 175 C99 WThrough HoleI2PAK - 3TubeSi1 Channel20 V62 nCEnhancementAec - Q101Coolirfet
FDP8860


MOSFET 30V N-Channel PowerTrench MOSFET
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ON Semiconductor 727
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AUD 2.0388
Multiples of: 1

80 A30 V2.5 mOhmsn - channel  - 55 C+ 175 C254 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement powertrench
IRF2804STRRPBF


Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
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Infineon 727
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AUD 3.0209
Multiples of: 1

            hexfet®      
STF15N95K5


MOSFET N-CH 950V 0.41Ohm typ. 12A SuperMESH 5
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STMicroelectronics 727
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AUD 4.1343
Multiples of: 750

12 A950 V410 mOhmsN - Channel30 V4 V- 55 C+ 150 C40 WThrough HoleTO - 220FP - 3TubeSi1 Channel30 V40 nC  Supermesh
FCP125N65S3R0


MOSFET SUPERFET3 650V 24A 125 mOhm
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ON Semiconductor 727
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AUD 3.9796
Multiples of: 50

24 A650 V125 mOhmsN - Channel 2.5 V- 55 C+ 150 C181 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V46 nCEnhancement  
STP28NM60ND


N-Channel 600 V 23A (Tc) 190W (Tc) Through Hole TO-220
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STMicroelectronics 727
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AUD 9.3657
Multiples of: 1

23 A650 V150 mOhmsN - Channel 4 V- 55 C+ 150 C190 WThrough HoleTO - 220 - 3TubeSi1 Channel- 25 V , 25 V62.5 nCEnhancement  
IXTA26P20P


MOSFET -26.0 Amps -200V 0.170 Rds
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IXYS 727
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AUD 7.0269
Multiples of: 1

26 A200 V170 mOhmsP - Channel 2 V- 55 C+ 150 C300 WSmd/SmtTO - 263AA - 3TubeSi1 Channel10 V56 nCEnhancement  
AUIRFB8409


Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
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Infineon 727
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AUD 9.5552
Multiples of: 1

195 A40 V1.2 mOhmsN - Channel20 V2.2 V To 3.9 V- 55 C+ 175 C375 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V300 nCEnhancementAec - Q101Coolirfet
IRF135SA204


N-Channel 135 V 160A (Tc) 500W (Tc) Surface Mount D2PAK-7
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Infineon 4
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AUD 3.2414
Multiples of: 1

160 A135 V4.7 mOhmsN - Channel 3 V- 55 C+ 175 C500 WSmd/SmtTO - 263 - 7Reel 1 Channel20 V210 nC   
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