MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPU80R1K0CEBKMA1


Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; IPAK
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Infineon 798
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AUD 0.8818
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            Coolmos Ce      
FDPF045N10A


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 798
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AUD 6.4851
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67 A100 V4.5 mOhmsN - Channel 2 V- 55 C+ 175 C43 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , 20 V74 nCEnhancement PowerTrench
IPB025N10N3G(TOKMAS)


100V 280A 2.3m@10V,20A 1PCSNChannel TO-263-7L MOSFETs ROHS
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Tokmas 798
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AUD 1.8717
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IPA60R125P6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
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Infineon 797
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AUD 2.709
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            coolmos p6      
TPD65R950M


650V 4.5A 870mO@10V,2A 37W N Channel TO-252 MOSFETs ROHS
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UNIGROUP 796
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AUD 0.457
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IPD95R450PFD7ATMA1


MOSFETs N
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Infineon 796
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AUD 1.6582
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13.3 A950 V450 mOhmsN - Channel 3.5 V- 55 C+ 150 C104 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 30 V , + 30 V43 nCEnhancement  
IPP023N10N5


Infineon Technologies MOSFET N-Ch 100V 120A TO220-3
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Infineon 796
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AUD 3.2859
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120 A100 V2 mOhmsN - Channel 3 V- 55 C+ 175 C375 WThrough HoleTO - 220 - 3Tube-1 Channel+/- 20 V168 nCEnhancement Optimos
HSH044N25


250V 50A 83W 34m@10V,5A 5V@250uA 1 N-Channel TO-263 MOSFETs ROHS
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HUASHUO 793
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AUD 3.1114
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HUF75852G3


MOSFET 75a 150V 0.016 Ohm N-Ch MOSFET
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ON Semiconductor 786
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AUD 14.103
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75 A150 V16 mOhmsN - Channel  - 55 C+ 175 C500 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V Enhancement Ultrafet
BSC034N06NSATMA1


MOSFET TRENCH 40<-<100V
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Infineon 347
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AUD 1.2067
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100 A60 V3.4 mOhmsN - Channel 2.1 V- 55 C+ 150 C74 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V33 nCEnhancement Optimos
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