MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFB3006GPBF


Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
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Infineon 1063
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AUD 3.3116
Multiples of: 1

270 A60 V2.1 mOhmsN - Channel    375 WThrough HoleTO - 220 - 3TubeSi 20 V200 nC   
NTMYS021N06CLTWG


MOSFET 60V 26A 21Ohm
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ON Semiconductor 1005
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AUD 0.8357
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           Cut Tape       
WST2026


20V 2A 65mΩ@10V,2A 400mW N Channel SOT-323 MOSFETs ROHS
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Winsok 805
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AUD 0.0667
Multiples of: 5

                   
IRFP260PBF


N-Channel 200 V 46A (Tc) 280W (Tc) Through Hole TO-247AC
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Vishay 804
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AUD 4.7642
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         Through HoleTO - 247 - 3TubeSi      
NTHL019N65S3H


N-Channel 650V 75A (Tc) 625W (Tc) Through Hole TO-247-3
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ON Semiconductor 802
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AUD 34.9209
Multiples of: 1

75 A650 V19.3 mOhmsN - Channel 4 V- 55 C+ 150 C625 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V282 nCEnhancement  
IPB65R115CFD7AATMA1


MOSFET AUTOMOTIVE
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Infineon 801
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AUD 3.6612
Multiples of: 1

21 A650 V115 mOhmsN - Channel 4 V- 40 C+ 150 C114 WSMD/SMTTO - 263 - 3Coolmos , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V41 nCEnhancementAEC - Q101CoolMOS
SI1032R-T1-GE3-HXY


20V 800mA 180m 1PCSNChannel SOT-523 MOSFETs ROHS
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HXY MOS 800
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AUD 0.1263
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JMTK3004A


30V 100A 70W 2.9mΩ@10V,30A 1.5V@250uA N Channel TO-252-2 MOSFETs ROHS
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JieJie 800
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AUD 0.1745
Multiples of: 5

                   
TPM4408ND8


DFN-3x3 MOSFETs ROHS
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TECH PUBLIC 798
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AUD 0.2452
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NCEP1520


150V 20A 59mO@10V,10A 68W N Channel TO-220 MOSFETs ROHS
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NCE Power 607
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AUD 0.5033
Multiples of: 1

                   
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