MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR5305TRPBF(XBLW)


60V 20A 1PCSPChannel TO-252-2L MOSFETs ROHS
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XBLW 800
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AUD 0.267
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SP010N13GTQ


TO-220-3L MOSFETs ROHS
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Siliup 800
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AUD 0.3317
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IPG20N06S4L11ATMA1


MOSFET MOSFET_)40V 60V)
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Infineon 800
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AUD 1.4056
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   N - Channel      TDSON - 8ReelSi1 Channel     
IXFX360N10T


MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
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IXYS 800
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AUD 16.0075
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360 A100 V2.9 mOhmsN - Channel 2.5 V- 55 C+ 175 C1.25 mWThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , 20 V525 nCEnhancement HiPerFET
IRF9Z24NSTRLPBF-JSM


TO-263-2L MOSFETs ROHS
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JSMSEMI 800
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AUD 0.6583
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IPZ40N04S5L2R8ATMA1


MOSFET N-CHANNEL_30/40V
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Infineon 799
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AUD 0.8475
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   N - Channel     Smd/SmtTSDSON - 8Cut TapeSi1 Channel   Aec - Q101 
IRLR7843TRLPBF


MOSFET MOSFT 30V 161A 3.3mOhm 34nC Log Lvl
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Infineon 799
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AUD 1.0179
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161 A30 V3.3 mOhmsN - Channel 2.3 V + 175 C140 WSmd/SmtDPAKReelSi1 Channel 50 nC   
MDD20N65F


650V 20A 420mΩ@VGS=10V null TO-220F MOSFETs ROHS
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Microdiode Electronics 798
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AUD 0.669
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SUD19P06-60


TO-252 MOSFETs ROHS
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TECH PUBLIC 795
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AUD 0.3248
Multiples of: 5

                   
SI1025X-T1-GE3


MOSFET 60V 500mA 280mW 4.0ohm @ 10V
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Vishay 790
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AUD 0.41
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtSC - 89 - 6ReelSi     Trenchfet
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