MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR3910


TO-252AA MOSFETs ROHS
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TECH PUBLIC 814
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AUD 0.2257
Multiples of: 5

                   
RSU4N60F


TO-220F MOSFETs ROHS
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REASUNOS 814
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AUD 0.2527
Multiples of: 5

                   
STF20N65M5


STMicroelectronics MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh M5
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STMicroelectronics 814
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AUD 2.1922
Multiples of: 1

18 A650 V190 mOhmsN - Channel 4 V- 55 C+ 150 C130 WThrough HoleTO - 220 - 3TubeSi1 Channel- 25 V , 25 V36 nCEnhancement MDmesh
SIHP24N80AE-GE3


MOSFET N-CHANNEL 800V TO-220AB
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Vishay 814
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AUD 4.7851
Multiples of: 1

21 A800 V160 mOhmsN - Channel 4 V- 55 C+ 150 C208 WThrough HoleTO - 220AB - 3Cut Tape , Reel , ReelSi1 Channel- 30 V , + 30 V59 nCEnhancement  
FDBL0150N60


Fairchild Semiconductor MOSFET Update code D
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ON Semiconductor 814
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AUD 7.109
Multiples of: 1

240 A60 V2.9 mOhmsn - channel 2 V- 55 C+ 175 C357 Wsmd/smtMO - 299A - 8Reelsi1 channel+/- 20 V130 nCenhancement powertrench
AUIRFS3107TRL


International Rectifier MOSFET 75V 230A 3 mOhm Automotive MOSFET
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Infineon 813
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AUD 6.7164
Multiples of: 1

260 A75 V2.5 mOhmsN - Channel   + 175 C370 WSmd/SmtD - PAK - 3ReelSi1 Channel 160 nC Aec - Q101 
HSBA6117


60V 60A 14mΩ@10V,18A 90W 2.5V@250uA P Channel PRPAK-5x6 MOSFETs ROHS
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HUASHUO 812
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AUD 0.6276
Multiples of: 1

                   
BSC123N08NS3G-HXY


100V 75A 7.3m 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS 798
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AUD 0.6047
Multiples of: 1

                   
IPP041N04N G


MOSFET OptiMOS 3 Power TRANSITOR 40V 80A
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Infineon 798
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AUD 0.9325
Multiples of: 1

80 A40 V4.1 mOhmsN - Channel  - 55 C+ 175 C94 WThrough HoleTO - 220TubeSi1 Channel20 V Enhancement Optimos
STD11NM65N


MOSFET N-Ch 650V 0.425Ohm 11A pwr MDMesh II
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STMicroelectronics 0
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AUD 2.6433
Multiples of: 2500

11 A650 V425 mOhmsN - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel    Mdmesh
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