MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC026N04LSATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 63W; PG-TDSON-8
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Infineon 9700
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AUD 0.5366
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            Optimos      
IPAN60R360PFD7SXKSA1


650V 10A 23W 360mO@2.9A,10V N Channel TO-220-FP MOSFETs ROHS
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Infineon 817
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AUD 0.8554
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FDMS7572S


MOSFET 25V N-Channel PowerTrench SyncFET
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ON Semiconductor 817
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AUD 1.2084
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23 A25 V2.4 mOhmsN - Channel 1.7 V  2.5 WSmd/SmtPOWER 56ReelSi1 Channel20 V32 nC  Powertrench Syncfet
ZVN4310A


MOSFET N-Chnl 100V
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Diodes Incorporated 816
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AUD 1.2018
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900 mA100 V500 mOhmsN - Channel 1 V- 55 C+ 150 C850 mWThrough HoleTO - 92 - 3Cut TapeSi1 Channel10 V Enhancement  
IXTH90P10P


MOSFET -90.0 Amps -100V 25 mOhms
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IXYS 816
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AUD 13.4463
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90 A100 V25 mOhmsp - channel 2 V- 55 C+ 150 C462 Wthrough holeTO - 247 - 3Tubesi1 channel10 V120 nCenhancement  
ISP25DP06NM


MOSFET SMALL SIGNAL MOSFETS
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Infineon 815
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AUD 0.5001
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Hot VN0606L-G


Transistor: N-MOSFET; unipolar; 60V; 1.5A; 1W; TO92
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Microchip 815
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AUD 1.4328
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330 mA60 V3 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel30 V Enhancement  
IPB017N08N5


Infineon Technologies MOSFET N-Ch 80V 120A D2PAK-2
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Infineon 815
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AUD 3.891
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120 A80 V1.5 mOhmsN - Channel 2.2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V223 nCEnhancement Optimos
IRF830ASTRLPBF


Vishay Semiconductors MOSFET N-Chan 500V 5.0 Amp
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Vishay 811
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AUD 1.4678
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5 A500 V1.4 OhmsN - Channel30 V - 55 C+ 150 C3.1 WSmd/SmtD2PAK - 3ReelSi   Enhancement  
IPD031N06L3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
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Infineon 807
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AUD 1.5187
Multiples of: 1

            Optimos 3      
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