MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ068N06NSATMA1


Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8
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Infineon 10474
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AUD 0.6387
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            Optimos      
Hot IRFI9Z34GPBF


MOSFET RECOMMENDED ALT 844-IRFI9Z34GPBF
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Vishay 812
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AUD 1.2746
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           TubeSi      
FCPF380N65FL1-F154


MOSFET SF2 650V 380MOHM F TO220F
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ON Semiconductor 812
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AUD 2.791
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10.2 A650 V380 mOhmsN - Channel 5 V- 55 C+ 150 C33 WThrough Hole TubeSi1 Channel- 20 V , + 20 V33 nCEnhancement  
RS6P100BHTB1


MOSFET NCH 100V 100A MOSFET
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ROHM 812
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AUD 2.5612
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100 A100 V5.9 mOhmsN - Channel 4 V- 55 C+ 150 C104 WSMD/SMTHSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V49 nCEnhancement  
FDMC86259P


MOSFET PT5 150/25V PchMOSFET
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ON Semiconductor 811
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AUD 2.6819
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- 13 A- 150 V99 mOhmsP - Channel25 V- 2.8 V- 55 C+ 150 C62 WSmd/SmtPOWER33 - 3ReelSi1 Channel25 V22 nC  Powertrench Power Clip
RJ1P12BBDTLL


N-Channel 100 V 120A (Tc) 178W (Tc) Surface Mount LPTL
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ROHM 811
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AUD 4.3836
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120 A100 V5.8 mOhmsN - Channel 2 V- 55 C+ 150 C178 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V80 nCEnhancement  
Hot IRFI9640GPBF


P-Channel 200 V 6.1A (Tc) 40W (Tc) Through Hole TO-220-3
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Vishay 810
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AUD 1.9224
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         Through HoleTO - 220 - 3TubeSi      
IAUA200N04S5N010


MOSFET MOSFET_(20V 40V)
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Infineon 805
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AUD 1.2356
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IPP029N06NXKSA1


MOSFETs OptiMOS Power-Transistor,60V
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Infineon 801
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AUD 1.0081
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84 A60 V2.9 mOhmsN - Channel 3.3 V- 55 C+ 175 C38 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V56 nCEnhancement OptiMOS
NCEP020N10LL


TOLL MOSFETs ROHS
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Tokmas 705
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AUD 1.4409
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