MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHG041N65SF-GE3


MOSFETs N-CHANNEL 650V
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Vishay 824
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AUD 5.2373
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IPB180N04S4H0ATMA1


Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
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Infineon 823
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AUD 2.3642
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            Optimos T2      
AUN084N10


100V 68A 66W 8.4m 2V DFN-8(5x6) MOSFETs ROHS
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ANHI 821
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AUD 0.7278
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STD10NM60ND


STMicroelectronics MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
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STMicroelectronics 821
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AUD 1.4349
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8 A650 V600 mOhmsN - Channel25 V - 55 C+ 150 C70 WSmd/SmtDPAK - 3ReelSi1 Channel25 V    
Hot FDPF51N25YDTU


Fairchild Semiconductor MOSFET 250V 28A N-CH UNIFET
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ON Semiconductor 821
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AUD 1.7579
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51 A250 V60 mOhmsN - Channel  - 55 C+ 150 C38 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement  
IXTT10N100D2


MOSFET D2 Depletion Mode Power MOSFETs
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IXYS 813
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AUD 25.8418
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10 A1 kV1.5 OhmsN - Channel 4.5 V- 55 C+ 150 C695 WSMD/SMTD3PAK - 3 (TO - 268 - 3)TubeSi1 Channel- 20 V , 20 V200 nCDepletion  
STP10NK60Z


Transistor: N-MOSFET; unipolar; 600V; 5.7A; 115W; TO220-3
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STMicroelectronics 795
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AUD 1.6925
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10 A600 V750 mOhmsN - Channel 3 V- 55 C+ 150 C115 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V70 nCEnhancement SuperMESH
DMP3036SSD-13


Diodes Incorporated MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss
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Diodes Incorporated 695
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AUD 0.6925
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- 18 A- 30 V16 mOhmsP - Channel - 1 V- 55 C+ 150 C1.7 WSmd/SmtSO - 8Reel 2 Channel25 V16.5 nCEnhancement Powerdi
Hot IRFR9210PBF


P-Channel 200 V 1.9A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
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Vishay 628
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AUD 0.77
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         Smd/SmtTO - 252 - 3TubeSi      
CPH6355-TL-H


MOSFET PCH 4V DRIVE SERIES
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ON Semiconductor 0
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AUD 0.1691
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3 A30 V169 mOhmsP - Channel    1.6 WSmd/SmtSC - 74AReelSi1 Channel     
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