MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK6Y61-60PX


null 25A 61mO@4.7A,10V 66W P Channel SOT-669 MOSFETs ROHS
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Nexperia 835
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AUD 0.5713
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           Cut Tape       
FDB0690N1507L(TOKMAS)


150V 220A 4.5mΩ@10V,50A 1PCSNChannel TO-263-7L MOSFETs ROHS
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Tokmas 834
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AUD 2.2894
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SIHF110N65SF-GE3


MOSFETs N-CHANNEL 650V
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Vishay 834
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AUD 2.8567
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12 A650 V115 mOhmsN - Channel 5 V- 55 C+ 150 C39 WThrough HoleTO - 220 - 3 Si1 Channel20 V83 nCEnhancement  
SIHL041N65SF-GE3


MOSFETs N-CHANNEL 650V
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Vishay 833
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AUD 5.6478
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74 A650 V43 mOhmsN - Channel 5 V- 55 C+ 150 C595 WThrough HoleTO - 247AD - 4L Si1 Channel20 V168 nCEnhancement  
SPD07N60C3ATMA1


MOSFET LOW POWER_LEGACY
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Infineon 832
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AUD 1.6746
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   N Channel      TO - 252 - 3Reel       
PSMN8R5-60YS,115


N-Channel 60 V 76A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 831
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AUD 0.6534
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   N - Channel  - 55 C+ 175 C Smd/SmtSOT - 669Reel       
IXTP18P10T


MOSFET 18 Amps 100V 0.12 Rds
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IXYS 831
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AUD 2.2821
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18 A100 V120 mOhmsP - Channel 4.5 V- 55 C+ 150 C83 WThrough HoleTO - 220 - 3TubeSi 15 V39 nCEnhancement Trenchp
DMN2041UVT-7


MOSFET MOSFET BVDSS: 8V 24V TSOT26 T&R 3K
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Diodes Incorporated 830
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AUD 0.2216
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BUK9Y4R8-60RAX


MOSFETs BUK9Y4R8-60RA/SOT669/LFPAK
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Nexperia 827
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AUD 1.3397
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          SOT - 669 - 5Reel , Cut Tape       
NTBG014N120M3P


MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L
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ON Semiconductor 0
6 to 16 Weeks Calender.png

AUD 90.978
Multiples of: 1

104 A1.2 kV20 mOhmsN - Channel 4.63 V- 55 C+ 175 C454 WSMD/SMTD2PAK - 7LReel , Cut TapeSiC1 Channel- 10 V , + 22 V337 nCEnhancement  
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