MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN3R0-30YL,115


NXP Semiconductors MOSFET <=30V N CH TRENCHFET
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Nexperia 839
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between Thu. 30 Jul to Wed. 05 Aug
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AUD 0.8819

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100 A30 V3 mOhmsN - Channel  - 55 C+ 175 C81 WSmd/SmtLFPAK - 4ReelSi1 Channel20 V Enhancement  
STFI9N80K5


MOSFET N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSFET in a I2PAKFP package
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STMicroelectronics 839
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between Thu. 30 Jul to Wed. 05 Aug
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AUD 1.6188

Multiples of: 1

7 A800 V900 mOhmsN - Channel 3 V- 55 C+ 150 C25 WThrough HoleTO - 220 - 3 Si1 Channel+/- 30 V12 nCEnhancement  
TK650A60F,S4X(S


Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP
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Toshiba 839
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between Thu. 30 Jul to Wed. 05 Aug
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AUD 2.591

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SIHA22N60E-E3


MOSFET 650V .18ohm@10V MOSFET
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Vishay 839
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between Wed. 05 Aug to Fri. 07 Aug
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AUD 3.103

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21 A650 V180 mOhmsN - Channel20 V4 V- 55 C+ 150 C35 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V86 nCEnhancement  
IRF1018ESTRLPBF


N-Channel 60 V 79A (Tc) 110W (Tc) Surface Mount D2PAK
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Infineon 839
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between Thu. 30 Jul to Wed. 05 Aug
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AUD 3.5983

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79 A60 V7.1 mOhmsN - Channel    110 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V46 nC   
IPP020N06N


Infineon Technologies MOSFET N-Ch 60V 120A TO220-3
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Infineon 838
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between Wed. 05 Aug to Fri. 07 Aug
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AUD 3.0119

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120 A60 V2 mOhmsN - Channel20 V2.1 V- 55 C+ 175 C214 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V106 nCEnhancement Optimos
IPB65R190CFD7AATMA1


N-Channel 650V 14A (Tc) 77W (Tc) Surface Mount PG-TO263-3
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Infineon 838
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between Wed. 05 Aug to Fri. 07 Aug
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AUD 3.1625

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          TO - 263 - 3 , D²PAK (2 Leads + Tab) , TO - 263ABDigi - Reel®Mosfet (Metal Oxide)      
RTQ020N03TR


MOSFET N-CH 30V 2A TSMT6
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ROHM 837
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between Wed. 05 Aug to Fri. 07 Aug
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AUD 0.2807

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2 A30 V138 mOhmsN - Channel    1.25 WSmd/SmtT SMT - 6ReelSi1 Channel12 V Enhancement  
SVF20N50F


TO-220F-3L MOSFETs ROHS
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Silan 837
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between Thu. 13 Aug to Tue. 18 Aug
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AUD 1.0697

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AOD2544


Transistor: N-MOSFET; unipolar; 150V; 16A; 75W; TO252
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Alpha & Omega 816
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between Thu. 13 Aug to Tue. 18 Aug
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AUD 0.6575

Multiples of: 1

                   
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