MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2014LHAB-7


Diodes Incorporated MOSFET FET BVDSS 8V 24V N-Ch Dual 20V 1550pF
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Diodes Incorporated 2780
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AUD 0.2775
Multiples of: 1

9 A20 V13 mOhmsN - Channel12 V0.71 V- 55 C+ 150 C1.7 WSmd/SmtU - DFN2030 - 6ReelSi2 Channel12 V16 nCEnhancement  
DMP2160U


SOT-23 MOSFETs ROHS
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TECH PUBLIC 834
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AUD 0.0693
Multiples of: 5

                   
EFC4612R-S-TR


MOSFET NCH 2.5V DRIVE SERIES
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ON Semiconductor 834
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AUD 0.0929
Multiples of: 5

6 A24 V45 mOhmsN - Channel     Smd/SmtWLCSP - 4Cut TapeSi      
VBZ3442


100V 2A 246mO@10V,2A N Channel SOT-23-3 MOSFETs ROHS
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VBsemi Elec 834
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AUD 0.1624
Multiples of: 5

                   
WSE9968A


MOSFET N Trench 100V 4.4A 3V @ 250uA 95 mΩ @ 4A,10V SOT-89 (SOT-89-3) RoHS
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Winsok 834
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AUD 0.3034
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DMN3024SFG-13


MOSFET 30V N-Ch ENH Mode PowerDI 7.5A - 6.3A
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Diodes Incorporated 834
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AUD 0.3087
Multiples of: 1

7.5 A30 V23 mOhmsN - Channel  - 55 C+ 150 C890 mWSmd/SmtPOWERDI 3333 - 8ReelSi1 Channel25 V Enhancement  
IRF9610PBF-BE3


P-Channel 200V 1.8A (Tc) 20W (Tc) Through Hole TO-220AB
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Vishay 834
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AUD 0.8602
Multiples of: 1

1.8 A200 V3 OhmsP - Channel 4 V- 55 C+ 150 C20 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V11 nCEnhancement  
RCX200N20


ROHM Semiconductor MOSFET
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ROHM 834
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AUD 1.9957
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20 A200 V310 mOhmsN - Channel 3 V- 55 C+ 150 C2.23 WThrough HoleTO - 220 - 3Bulk-1 Channel+/- 30 V40 nCEnhancement  
STB18NF30


MOSFET N-Ch 330V 18A MOS STripFET II D2PAK
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STMicroelectronics 834
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AUD 2.2265
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18 A330 V180 mOhmsN - Channel    150 WSmd/SmtD2PAK - 2ReelSi  44 nC Aec - Q101Stripfet
HSCB3103


DFN-6L(2x2) MOSFETs ROHS
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HUASHUO 814
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AUD 0.1209
Multiples of: 5

                   
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