MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RTF016N05TL


N-Channel 45 V 1.6A (Ta) 320mW (Ta) Surface Mount TUMT3
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ROHM 35755
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 0.1855

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1.6 A45 V190 mOhmsN - Channel 500 mV- 55 C+ 150 C0.8 WSmd/SmtTUMT - 3ReelSi1 Channel4.5 V2.3 nCEnhancement  
R6507KNXC7G


MOSFET 650V 7A TO-220FM, High-speed switching Power MOSFET
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ROHM 837
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 1.5548

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7 A650 V665 mOhmsN - Channel 5 V- 55 C+ 150 C46 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V14.5 nCEnhancement  
BUK7J2R4-80MX


MOSFETs N-channel 80 V, 2.4 mOhm, Standard level MOSFET in LFPAK56E
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Nexperia 837
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 1.8881

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231 A80 V2.4 mOhmsN - Channel 4 V- 55 C+ 175 C294 WSMD/SMTLFPAK56E - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V85 nCEnhancement  
FCPF250N65S3R0L-F154


MOSFET SUPERFET3 650V TO220F PKG
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ON Semiconductor 837
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AUD 3.0373

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12 A650 V250 mOhmsN - Channel 4.5 V- 55 C+ 150 C31 WThrough Hole  Si1 Channel- 30 V , + 30 V24 nCEnhancement  
SPB17N80C3ATMA1


Infineon Technologies MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3
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Infineon 837
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AUD 2.8239

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17 A800 V250 mOhmsN - Channel 2.1 V- 55 C+ 150 C227 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V117 nCEnhancement Coolmos
IRF9Z10PBF-BE3


P-Channel 60V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 836
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between Fri. 31 Jul to Thu. 06 Aug
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AUD 0.7564

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          TO - 220 - 3TubeMosfet (Metal Oxide)      
IPB120N04S4-02


Infineon Technologies MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
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Infineon 836
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 1.7896

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120 A40 V1.8 mOhmsN - Channel 2 V- 55 C+ 175 C158 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V103 nCEnhancementAec - Q101Optimos
IAUT165N08S5N029ATMA2


OptiMOS 80V 165A HSOF-8
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Infineon 836
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 2.1836

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165 A80 V2.9 mOhmsN - Channel 2.2 V- 55 C+ 175 C167 WSmd/SmtHSOF - 8Cut TapeSi1 Channel20 V90 nCEnhancementAec - Q101 
IPP65R095C7XKSA1


Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
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Infineon 836
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 4.6627

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            Coolmos      
AOD4185


40V 50A 12mO@10V,50A P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 835
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between Fri. 14 Aug to Wed. 19 Aug
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AUD 0.6968

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