MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FCP11N60N


MOSFET SupreMOS 11A
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ON Semiconductor 873
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AUD 2.8218
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   n - channel  - 55 C+ 150 C   Tube       
TC8220K6-G


Microchip Technology MOSFET 2PR N- & PCH ENHANCE MODE MOSFET
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Microchip 873
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AUD 3.4701
Multiples of: 1

2.3 A200 V6 Ohms , 7 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C Smd/SmtDFN - 12Reel 4 Channel10 v , - 10 V Enhancement  
IPF011N08NM6ATMA1


MOSFETs OptiMOS 6 n-channel power MOSFET 80 V in DPAK 7-pin
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Infineon 873
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AUD 4.6791
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           Reel , Cut TapeSi     OptiMOS
SIHB065N65E-GE3


MOSFETs N-CHANNEL 650V
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Vishay 873
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AUD 4.8761
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50 A650 V85 mOhmsN - Channel 5 V- 55 C+ 150 C184 WSMD/SMTPOWERPAK - 8 Si1 Channel+ 30 V63 nCEnhancement  
SIHG33N60E-GE3


MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
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Vishay 873
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AUD 5.6884
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33 A600 V98 mOhmsN - Channel 4 V- 55 C+ 150 C278 WThrough HoleTO - 247AC - 3TubeSi1 Channel30 V103 nCEnhancement E - Series
STFW69N65M5


MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh V MOS
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STMicroelectronics 873
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AUD 14.8769
Multiples of: 300

58 A 45 mOhmsn - channel    70 Wthrough holeTO - 3PFTubesi1 channel    mdmesh
IPS60R1K0PFD7SAKMA1


650V 4.7A 1O@1A,10V 26W N Channel TO-251-3 MOSFETs ROHS
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Infineon 872
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AUD 0.4515
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           Tube       
STB30NF10T4-JSM


TO-263-2L MOSFETs ROHS
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JSMSEMI 872
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AUD 1.16
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IRFSL7730PBF


International Rectifier MOSFET 75V Single N-Channel HEXFET
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Infineon 872
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AUD 3.5215
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246 A75 V2.6 mOhmsN - Channel 3.7 V- 55 C+ 175 C375 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V271 nCEnhancement Strongirfet
FDS4435


30V 12A 11mΩ@10V 3W P Channel SOP-8 MOSFETs ROHS
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Tokmas 816
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AUD 0.1235
Multiples of: 1

                   
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