MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF2204PBF


Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
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Infineon 874
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AUD 1.6369
Multiples of: 1

210 A40 V3.6 mOhmsN - Channel    330 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V130 nC   
IPB017N06N3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
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Infineon 874
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AUD 2.8541
Multiples of: 1

            Optimos 3      
UF3C065030T3S


MOSFET 650V30mOhm SiC FAST CASCODE G3 TO-220-3L REDUCED Rth
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UnitedSiC 874
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AUD 23.3627
Multiples of: 1

85 A650 V35 mOhmsN - Channel 5 V- 55 C+ 175 C441 WThrough HoleTO - 220 - 3TubeSic1 Channel25 V51 nCEnhancement  
DMT3020LDT-7


MOSFETs MOSFET BVDSS: 25V-30V V-DFN3030-8 T&R 1.5K
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Diodes Incorporated 873
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AUD 0.5004
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ZXMS6004FFQTA


MOSFET 60V N-Channel 500mohm 1.3A 90mJ
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Diodes Incorporated 873
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AUD 0.6987
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1.3 A60 V350 mOhmsN - Channel 700 mV- 40 C+ 125 C1.5 WSmd/SmtSOT - 23F - 3ReelSi1 Channel5 V EnhancementAec - Q101Intellifet
SUD19P06-60-E3


null 18.3A 60mO@10A,10V P Channel TO-252 MOSFETs ROHS
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Vishay 873
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AUD 0.7421
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   P - Channel  - 55 C+ 150 C Smd/SmtTO - 252 - 3Reel       
IRFI730GPBF


N-Channel 400 V 3.7A (Tc) 35W (Tc) Through Hole TO-220-3
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Vishay 873
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AUD 1.8181
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   N - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3 FPTube       
IXFQ20N50P3


MOSFET Polar3 HiPerFET Power MOSFET
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IXYS 873
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AUD 5.6806
Multiples of: 1

20 A500 V300 mOhmsN - Channel 5 V- 55 C+ 150 C380 WThrough HoleTO - 3P - 3TubeSi 30 V36 nCEnhancement Hiperfet
BSS169


100V 0.29A 350mW 2.95@4.5V,0.18A 1V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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ElecSuper 873
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AUD 0.0149
Multiples of: 50

                   
2SK3018


30V 100mA 350mW 8Ω@4V,10mA 1.5V@100uA N Channel SOT-23 MOSFETs ROHS
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Hong Kong Chuangji 873
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AUD 0.0151
Multiples of: 50

                   
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