MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQPF19N20


MOSFET 200V N-Channel QFET
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ON Semiconductor 877
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AUD 1.2188
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11.8 A200 V150 mOhmsN - Channel  - 55 C+ 150 C50 WThrough HoleTO - 220FTubeSi1 Channel30 V Enhancement Qfet
SI5908BDC-T1-GE3


MOSFETs DUAL N-CHANNEL 20-V (D-S) MOSFET
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Vishay 876
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AUD 0.4893
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IRFU320PBF


N-Channel 400 V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
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Vishay 876
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AUD 0.6619
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3.1 A400 V1.8 OhmsN - Channel 2 V- 55 C+ 150 C42 WThrough HoleTO - 251 - 3TubeSi1 Channel- 20 V , 20 V20 nCEnhancement  
IRFP448PBF


MOSFET N-Chan 500V 11 Amp
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Vishay 876
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AUD 4.4328
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   N - Channel  - 55 C+ 150 C Through HoleTO - 247ACTubeSi      
STP34N65M5


MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh V
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STMicroelectronics 876
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AUD 8.1725
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18.3 A650 V110 mOhmsN - Channel 3 V- 55 C+ 150 C190 WThrough HoleTO - 220 - 3TubeSi1 Channel- 25 V , 25 V62.5 nCEnhancement MDmesh
FDD4685


Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; TO252
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ON Semiconductor 875
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AUD 0.5942
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            Powertrench®      
STF12N50M2


STMicroelectronics MOSFET
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STMicroelectronics 875
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AUD 1.0552
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10 A500 V325 mOhmsN - Channel 2 V- 55 C+ 150 C85 WThrough HoleTO - 220FP - 3ReelSi1 Channel25 V15 nCEnhancement Mdmesh
IRF100B201(UMW)


TO-220 MOSFETs ROHS
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Youtai 873
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AUD 0.7127
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IPT60R024CM8XTMA1


MOSFETs 600V CoolMOS CM8 Power Transistor
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Infineon 867
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AUD 10.2284
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103 A650 V24 mOhmsN - Channel 4.7 V- 55 C+ 150 C543 WSMD/SMT Reel , Cut TapeSi1 Channel20 V122 nCEnhancement CoolMOS
SFS15R10GNF


PDFN(5x6) MOSFETs ROHS
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Oriental Semiconductor 788
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AUD 1.0814
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