MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHG080N65SF-GE3


MOSFETs N-CHANNEL 650V
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Vishay 887
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AUD 4.006
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46 A650 V80 mOhmsN - Channel 5 V- 55 C+ 150 C403 WThrough HoleTO - 247AC - 3 Si1 Channel20 V91 nCEnhancement  
STH400N4F6-2


STMicroelectronics MOSFET N-channel 40 V 180 A STripFET Pwr MOSFET
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STMicroelectronics 887
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AUD 7.109
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180 A40 V1.15 mOhmsn - channel20 V4.5 V- 55 C+ 175 C300 Wsmd/smtH2PAK - 2Reelsi1 channel20 V404 nCenhancementaec - q101 
TPH8R903NL,LQ(S


MOSFETS SILICON N-CHANNEL MOS
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Toshiba 886
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AUD 0.5336
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FDMS6673BZ


MOSFET -30V 28A P-Channel PowerTrench
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ON Semiconductor 886
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AUD 0.7565
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   P - Channel  - 55 C+ 150 C Smd/SmtPOWER 56Reel       
SIHD2N80E-GE3


MOSFET 800V Vds 30V Vgs DPAK (TO-252)
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Vishay 886
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AUD 1.0447
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2.8 A800 V2.38 OhmsN - Channel 4 V- 55 C+ 150 C62.5 WSMD/SMTDPAK - 3 (TO - 252 - 3)TubeSi1 Channel- 30 V , 30 V9.8 nCEnhancement  
STP5N60M2


MOSFET N-CH 600V 1.26Ohm typ. 3.7A MDmesh II
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STMicroelectronics 886
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AUD 1.1884
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3.7 A600 V1.26 OhmsN - Channel25 V3 V  45 WThrough HoleTO - 220 - 3TubeSi1 Channel25 V4.5 nC  Mdmesh
FQU8P10TU


Fairchild Semiconductor MOSFET -100V Single
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ON Semiconductor 884
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AUD 0.6501
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- 6.6 A- 100 V410 mOhmsP - Channel30 V - 55 C+ 150 C2.5 WThrough HoleIPAK - 3TubeSi1 Channel30 V Enhancement  
FDP083N15A_F102


MOSFET 150V N-CHANNEL POWERTRENCH MOSFET
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ON Semiconductor 884
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AUD 4.2295
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105 A150 V6.85 mOhmsN - Channel 4 V  231 WThrough HoleTO - 220TubeSi1 Channel20 V64.5 nC   
MMBZ15VDLT1G


SOT-23 MOSFETs ROHS
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TECH PUBLIC 873
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AUD 0.0492
Multiples of: 10

                   
CRSS038N08N


85V 120A 3.8mO@10V,50A 208W N Channel TO-263-3 MOSFETs ROHS
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CRMICRO 854
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AUD 0.5267
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