MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP9N65M2


STMicroelectronics MOSFET
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STMicroelectronics 875
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AUD 1.1673
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5 A650 V900 mOhmsn - channel 3 V- 55 C+ 150 C60 Wthrough holeTO - 220 - 3Tubesi1 channel25 V10 nC  mdmesh
NVTFS002N04CLTAG


MOSFET 40V 2.2 mOhm 142A Single N-Channel
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ON Semiconductor 875
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AUD 1.8224
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           Cut Tape       
STL15N65M5


MOSFET N-CH 650V 0.335Ohm 10A MDmesh V
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STMicroelectronics 875
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AUD 2.0556
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10 A650 V375 mOhmsN - Channel 5 V- 55 C+ 150 C52 WSMD/SMTPowerflat - 5X6 - 8Reel , Cut TapeSi1 Channel- 25 V , 25 V22 nCEnhancement MDmesh
IPW65R110CFDA


Infineon Technologies MOSFET N-Ch 650V 31.2A TO247-3
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Infineon 875
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AUD 8.2873
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31.2 A650 V99 mOhmsN - Channel+/- 20 V4 V- 55 C+ 150 C277.8 WThrough HoleTO - 247 - 3Tube-1 Channel20 V118 nCEnhancement Coolmos
CSD13306W


MOSFET 12-V, N channel NexFET power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA
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Texas Instruments 874
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AUD 0.2216
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3.5 A12 V10.2 mOhmsN - Channel     Smd/SmtDSBGA - 6Tape And ReelSi1 Channel10 V Enhancement Nexfet
BR80N08A


MOSFET N Trench 80V 100A (Tc) 4V @ 250uA 8 mΩ @ 40A,10V TO-220 RoHS
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Blue Rocket 874
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AUD 0.5317
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PHT6NQ10T,135


N-Channel 100 V 3A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SOT-223
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Nexperia 874
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AUD 0.6692
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   N - Channel  - 65 C+ 150 C Smd/SmtSOT - 223Reel       
ISZ0803NLSATMA1


MOSFET TRENCH >=100V
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Infineon 874
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AUD 0.8269
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37 A100 V16.9 mOhmsN - Channel 2.3 V- 55 C+ 150 C43 WSMD/SMT Cut Tape , ReelSi1 Channel- 20 V , + 20 V6 nCEnhancement  
KF10N60F-U/PSF


TO-220AB MOSFETs ROHS
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KEC 874
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AUD 1.2023
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IRFH5250DTRPBF


International Rectifier MOSFET 25V 1 N-CH HEXFET 1.4mOhms 39nC
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Infineon 874
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AUD 1.405
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40 A25 V1.4 mOhmsN - Channel20 V   3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V39 nC   
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