MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB60R280P6ATMA1


MOSFET LOW POWER_PRICEPERFORM
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Infineon 960
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AUD 1.9349
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           Cut Tape       
Hot IRFSL7430PBF


International Rectifier MOSFET HEXFET Power MOSFET 40V Single N-Channel
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Infineon 960
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AUD 2.6291
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426 A40 V970 mOhmsN - Channel 2.2 V- 55 C+ 175 C375 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V460 nCEnhancement Strongirfet
IPB65R230CFD7AATMA1


MOSFET AUTOMOTIVE
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Infineon 960
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AUD 2.7746
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11 A650 V230 mOhmsN - Channel 4 V- 40 C+ 150 C63 WSMD/SMTTO - 263 - 3Coolmos , Cut Tape , ReelSi1 Channel- 20 V , + 20 V23 nCEnhancementAEC - Q101CoolMOS
STFI7LN80K5


MOSFET N-channel 800 V, 0.29 Ohm typ., 14 A MDmesh K5 Power MOSFET in a I2PAKFP package
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STMicroelectronics 959
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AUD 1.4185
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5 A800 V1.15 OhmsN - Channel 3 V- 55 C+ 150 C25 WThrough HoleTO - 220 - 3 Si1 Channel+/- 30 V12 nCEnhancement  
CXDM1002N TR


Central Semiconductor MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 1.2W
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Central Semiconductor 958
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AUD 0.775
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2 A100 V140 mOhmsN - Channel 2.1 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 89 - 3ReelSi1 Channel20 V6 nCEnhancement  
STP130N8F7


MOSFET LGS LV MOSFET
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STMicroelectronics 958
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AUD 1.3512
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80 A80 V5 mOhmsN - Channel 2.5 V- 55 C+ 175 C205 WThrough HoleTO - 220 - 3 Si1 Channel20 V60 nCEnhancement Stripfet
IPP041N12N3 G


MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3
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Infineon 958
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AUD 3.8254
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120 A120 V3.5 mOhmsN - Channel 2 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V211 nCEnhancement Optimos
FDMS86263P


MOSFET PT5 150/25V Pch Pwr Trench MOSFET
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ON Semiconductor 958
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AUD 1.0196
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- 22 A- 150 V43 mOhmsP - Channel25 V- 4 V- 55 C+ 150 C104 WSmd/SmtPOWER 56 - 8ReelSi1 Channel25 V45 nCEnhancement Powertrench
SK30P10


TO-252 MOSFETs ROHS
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Shikues 840
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AUD 0.731
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SIHP120N60E-GE3


MOSFET 650V Vds; 30V Vgs TO-220AB
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Vishay 0
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AUD 2.7578
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25 A600 V120 mOhmsN - Channel 3 V- 55 C+ 150 C179 WThrough HoleTO - 220AB - 3TubeSi1 Channel30 V45 nCEnhancement  
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