MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTZD3154NT1G-VB


20V 200mA N Channel SC75-6 MOSFETs ROHS
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VBsemi Elec 960
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AUD 0.1515
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SK15P06


TO-252 MOSFETs ROHS
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Shikues 960
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AUD 0.1719
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WMR07N03T1


Transistor: N-MOSFET; unipolar; DFN2020-6
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Wayon 960
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AUD 0.1755
Multiples of: 1

                   
SI1965DH-T1-GE3-VB


20V 1.8A 155mΩ@4.5V 2 P-Channel SC-70-6 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 960
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AUD 0.1965
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WMS04P06TS


Transistor: P-MOSFET; unipolar; SOP8
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Wayon 960
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AUD 0.1985
Multiples of: 1

                   
WMS08P03T1


Transistor: P-MOSFET; unipolar; SOP8
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Wayon 960
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AUD 0.1985
Multiples of: 1

                   
DMN1019UVT-7


Diodes Incorporated MOSFET 12V Enh Mode FET
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Diodes Incorporated 960
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AUD 0.2237
Multiples of: 5

11 A12 V7 mOhmsN - Channel 350 mV- 55 C+ 150 C2.17 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel8 V50.6 nCEnhancement  
SI1553CDL-T1-BE3


Mosfet Array N and P-Channel 20V 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) 290mW (Ta), 340mW (Tc) Surface Mount SC-70-6
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Vishay 960
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AUD 0.2245
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700 mA20 V390 mOhms , 850 mOhmsN - Channel, P - Channel 1.5 V- 55 C+ 150 C340 mWSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 12 V , 12 V3 nCEnhancement TrenchFET
BUK6D81-80EX


MOSFET BUK6D81-80ESOT1220SOT1220
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Nexperia 940
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AUD 0.1806
Multiples of: 1

9.8 A80 V81 mOhmsN - Channel 1.3 V- 55 C+ 175 C18.8 WSmd/SmtDfn2020md - 6Cut TapeSi1 Channel20 V14.9 nCEnhancementAec - Q101 
NP4805SR-G


SOP-8 MOSFETs ROHS
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NATLINEAR 9
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AUD 0.1832
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