MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ISP16DP10LMAXTSA1


MOSFETs SMALL SIGNAL MOSFETS
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Infineon 1555
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AUD 0.9096
Multiples of: 1

3.9 A60 V67 mOhmsP - Channel 4 V- 55 C+ 150 C5 WSMD/SMTSOT - 223 - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V48 nCEnhancement  
HL3416


20V 6.5A 22m@4.5V,6.5A 1.3W 620mV@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 1358
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AUD 0.0647
Multiples of: 10

                   
R6004KNXC7G


MOSFETs Nch 600V 4A Power MOSFET
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ROHM 962
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AUD 1.343
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4 A600 V980 mOhmsN - Channel 5 V- 55 C+ 150 C40 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V10.2 nCEnhancement  
IPB80R290C3AATMA2


N-Channel 800V 17A (Tc) 227W (Tc) Surface Mount PG-TO263-3-2
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Infineon 962
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AUD 4.1373
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17 A800 V670 mOhmsN - Channel 3 V- 40 C+ 150 C227 WSMD/SMTTO - 263 - 3 - 2Reel , Cut TapeSi1 Channel- 20 V , 20 V88 nCEnhancementAEC - Q101CoolMOS
IRF7304TRPBF


SO-8 MOSFETs ROHS
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VBsemi Elec 961
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AUD 0.5072
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ZVN2110GTA


N-Channel 100 V 500mA (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 961
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AUD 0.5914
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500 mA100 V4 OhmsN - Channel 800 mV- 55 C+ 150 C2 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel10 V Enhancement  
NTPF250N65S3H


MOSFET SUPERFET3 FAST 250MOHM TO-220F
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ON Semiconductor 961
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AUD 3.4642
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13 A650 V250 mOhmsN - Channel 4 V- 55 C+ 150 C29 WThrough HoleTO - 220 - 3 Si1 Channel- 30 V , + 30 V24 nCEnhancement  
DMG1012T-13


MOSFET 20V N-Ch Enhance Mode MOSFET
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Diodes Incorporated 960
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AUD 0.0701
Multiples of: 10

630 mA20 V400 mOhmsN - Channel 500 mV- 55 C+ 150 C0.28 WSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel6 V736.6 nCEnhancement  
WMR05N10TS


Transistor: N-MOSFET; unipolar; DFN2020-6
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Wayon 960
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AUD 0.0982
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TM60N02D


20V 60A 4.9m TO-252-3L MOSFETs ROHS
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Tritech-MOS 955
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AUD 0.1451
Multiples of: 5

                   
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