MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHFBC30AL-GE3


MOSFETs MOSFET N-CHANNEL 600V
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Vishay 965
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AUD 0.8701
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            Si      
IPB80N04S4-03


Infineon Technologies MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2
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Infineon 965
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AUD 1.9167
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80 A40 V3.3 mOhmsN - Channel  - 55 C+ 175 C94 WSmd/SmtD2PAK - 3ReelSi1 Channel20 V51 nC Aec - Q101Optimos
STP17N62K3


Trans MOSFET N-CH 620V 15.5A 3-Pin(3+Tab) TO-220AB Tube
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STMicroelectronics 965
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AUD 5.0159
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           -       
IPB60R099CPATMA1


Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO263-3-2
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Infineon 965
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AUD 5.5985
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   N Channel               
STB57N65M5


Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK
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STMicroelectronics 965
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AUD 9.5696
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            supermesh      
ZXMN6A07ZTA


Trans MOSFET N-CH 60V 2.5A 4-Pin(3+Tab) SOT-89 T/R
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Diodes Incorporated 963
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AUD 0.5872
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2.5 A60 V250 mOhmsN - Channel 1 V  2.6 WSmd/SmtSOT - 89 - 3Cut TapeSi1 Channel10 V3.2 nCEnhancement  
IQE050N08NM5CGSCATMA1


MOSFET
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Infineon 963
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AUD 2.1179
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16 A80 V5 mOhmsN - Channel 3.8 V- 55 C+ 175 C2.5 WSMD/SMTWHTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V44 nCEnhancement  
LGE2301


Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
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Luguang 942
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AUD 0.0669
Multiples of: 5

                   
AUIRF3205


MOSFET 55V, 98A, 8mOhm Automotive MOSFET
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Infineon 693
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AUD 3.3582
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98 A55 V8 mOhmsN - Channel    150 WThrough HoleTO - 220 - 3TubeSi  97.3 nC Aec - Q101 
FCPF290N80


Fairchild Semiconductor MOSFET SuperFET2 800V 290 mOhm
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ON Semiconductor 1
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AUD 5.6096
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17 A800 V290 mOhmsn - channel 2.5 V- 55 C+ 150 C44 Wthrough holeTO - 220F - 3Tubesi1 channel+/- 20 V58 nCenhancement superfet ii
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