MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP28NM50N


MOSFET N-Ch 500V 0.135 21A MDmesh II
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STMicroelectronics 970
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AUD 4.9177
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21 A500 V158 mOhmsN - Channel 4 V + 150 C90 WThrough HoleTO - 220 - 3TubeSi1 Channel25 V50 nC  Mdmesh
SiHP24N65E-E3


MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS
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Vishay 970
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AUD 5.0667
Multiples of: 1

24 A650 V145 mOhmsN - Channel 4 V- 55 C+ 150 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V81 nCEnhancement  
STF42N60M2-EP


STMicroelectronics MOSFET
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STMicroelectronics 970
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AUD 5.2175
Multiples of: 50

34 A600 V87 mOhmsN - Channel 2 V- 55 C+ 150 C40 WThrough HoleTO - 220FP - 3 Si1 Channel25 V55 nCEnhancement Mdmesh
SIHB35N60EF-GE3


MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
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Vishay 970
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AUD 5.4981
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32 A600 V97 mOhmsN - Channel 2 V- 55 C+ 150 C250 WSmd/SmtTO - 263 - 3 Si1 Channel30 V134 nCEnhancement  
R6035VNX3C16


MOSFET 600V 35A INTEGRATED HIGH-SPEE
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ROHM 970
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AUD 6.0418
Multiples of: 1

35 A600 V114 mOhmsN - Channel 6 V- 55 C+ 150 C347 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V50 nCEnhancement  
STB28NM60ND


MOSFET Nchnl 600 V 0120 Ohm typ 24 A Pwr MOSFET
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STMicroelectronics 970
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AUD 6.1698
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23 A650 V150 mOhmsN - Channel25 V4 V  190 WSmd/SmtD2PAK - 2Reel   62.5 nC   
STB37N60DM2AG


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 970
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AUD 6.1828
Multiples of: 1000

28 A600 V110 mOhmsn - channel 4 V- 55 C+ 150 C210 Wsmd/smtTO - 252 - 3Reelsi1 channel+/- 30 V54 nCenhancementaec - q101mdmesh
IPBE65R115CFD7AATMA1


MOSFET AUTOMOTIVE
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Infineon 970
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AUD 6.2769
Multiples of: 1

21 A650 V115 mOhmsN - Channel 4 V- 40 C+ 150 C114 WSMD/SMTTO - 263 - 7Coolmos , Cut Tape , ReelSi1 Channel- 20 V , + 20 V41 nCEnhancementAEC - Q101CoolMOS
IPB020N10N5LFATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 970
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AUD 5.7743
Multiples of: 1000

120 A100 V1.7 mOhmsN - Channel 2.2 V- 55 C+ 175 C375 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel20 V210 nCEnhancement Optimos
PJMP130N65EC_T0_00001


MOSFET 650V/ 130mohm Super Junction Easy version Gen.1.5
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Panjit 970
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AUD 6.75
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29 A650 V130 OhmsN - Channel 4 V- 55 C+ 150 C235 WThrough Hole Reel , Cut TapeSi1 Channel- 30 V , + 30 V51 nCEnhancement  
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