MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STFU18N65M2


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 970
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AUD 2.7985
Multiples of: 1

                   
IPB60R299CPAATMA1


MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA
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Infineon 970
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AUD 2.9151
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11 A600 V270 mOhmsN - Channel 2.5 V- 40 C+ 150 C96 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V29 nCEnhancement Coolmos
IPP027N08N5AKSA1


Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3
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Infineon 970
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AUD 3.0226
Multiples of: 500

            Optimos 5      
IPB073N15N5ATMA1


Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
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Infineon 970
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AUD 3.2127
Multiples of: 1000

            Optimos 5      
R6511ENJTL


MOSFET NCH 650V 11A POWER MOSFET
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ROHM 970
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AUD 3.2179
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           Cut Tape       
IPB110P06LMATMA1


MOSFET TRENCH 40<-<100V
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Infineon 970
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AUD 3.2407
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100 A60 V11 mOhmsP - Channel - 1 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V- 281 nCEnhancement  
IPB025N08N3GATMA1


Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
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Infineon 970
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AUD 3.4888
Multiples of: 1000

            Optimos 3      
IPB180N04S4-H0


Infineon Technologies MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2
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Infineon 970
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AUD 3.5595
Multiples of: 1

180 A40 V1.1 mOhmsN - Channel 2 V- 55 C+ 175 C250 WSmd/SmtD2PAK - 7ReelSi1 Channel20 V173 nCEnhancementAec - Q101Optimos
STH170N8F7-2


MOSFET POWER MOSFET
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STMicroelectronics 970
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AUD 3.5634
Multiples of: 1000

120 A80 V3.7 mOhmsN - Channel 2.5 v to 4.5 V- 55 C+ 175 C250 WSmd/SmtH2PAK - 3Cut Tape-1 Channel+/- 20 V120 nCEnhancement Stripfet
STH2N120K5-2AG


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 970
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AUD 3.7118
Multiples of: 1000

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