MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB65R095C7ATMA2


MOSFET HIGH POWER_NEW
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Infineon 1916
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AUD 5.0808
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24 A650 V84 mOhmsN - Channel 3 V- 55 C+ 150 C128 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V45 nCEnhancement CoolMOS
R6024KNJTL


MOSFET Nch 600V 24A Si MOSFET
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ROHM 970
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AUD 3.7692
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24 A600 V150 mOhmsN - Channel 3 V- 55 C+ 150 C245 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V45 nCEnhancement  
IPB80N08S207ATMA1


Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
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Infineon 970
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AUD 3.992
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STP28N65M2


STMicroelectronics MOSFET
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STMicroelectronics 970
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AUD 3.9879
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         through holeTO - 220 - 3Reel       
R6020KNXC7G


MOSFET 600V POWER MOSFET
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ROHM 970
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AUD 4.0515
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20 A600 V196 mOhmsN - Channel 5 V- 55 C+ 150 C68 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , 20 V40 nCEnhancement  
Hot IPB019N08N3GATMA1


Infineon Technologies MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
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Infineon 970
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AUD 4.0765
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180 A80 V1.6 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V206 nCEnhancement Optimos
PSMN9R5-100PS,127


MOSFET N-CH 100V STD LEVEL MOSFET
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Nexperia 970
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AUD 4.5709
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89 A100 V9.6 mOhmsn - channel 4.8 V- 55 C+ 175 C211 Wthrough holeTO - 220 - 3Tubesi1 channel20 V82 nCenhancement  
PSMN4R3-80ES,127


MOSFET N-Ch 80V 4.3 mOhms
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Nexperia 970
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AUD 4.6642
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120 A80 V4.3 mOhmsn - channel 3 V- 55 C+ 175 C306 Wthrough holeTO - 262 - 3Rail/Tubesi1 channel20 V104 nCenhancement  
STL18N55M5


MOSFET N-Ch 550V 0.180 Ohm 13A HV MDMesh V
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STMicroelectronics 970
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AUD 4.6858
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13 A550 V270 mOhmsN - Channel    3 WSmd/SmtPowerflat - 4 8X8 HVReel       
STH250N55F3-6


Trans MOSFET N-CH 55V 180A 7-Pin(6+Tab) H2PAK T/R
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STMicroelectronics 970
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AUD 4.7091
Multiples of: 1

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