MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WM03N06M


Transistor: N-MOSFET; unipolar; SOT23; ESD
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wayon 1094
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AUD 0.0481
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NVMFWS6D2N08XT1G


MOSFETs T10 80V STD NCH MOSFET SO8FL PREMIER WF
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ON Semiconductor 1094
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AUD 1.1033
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71 A80 V6.2 mOhmsN - Channel 3.6 V- 55 C+ 175 C68 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V19 nCEnhancement  
SI4840BDY-T1-E3-VB


40V 12A null SO-8 MOSFETs ROHS
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VBsemi Elec 1093
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AUD 0.3631
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SWB015R03VLT


30V 250A 1.2mΩ TO-263 MOSFETs ROHS
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Sam&wing 1093
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AUD 0.539
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WMF07N70C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 700V; 4A; 5W; SOT223
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Wayon 1092
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AUD 0.5851
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            Sj - Mosfet C2      
IRFP4368PBFXKMA1


MOSFETs TRENCH 40<-<100V
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Infineon 1092
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AUD 5.9646
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195 A75 V1.85 mOhmsN - Channel 4 V- 55 C+ 175 C520 WThrough HoleTO - 247AC - 3TubeSi1 Channel- 20 V , + 20 V380 nCEnhancement  
TN0702N3-G


Transistor: N-MOSFET; unipolar; 20V; 0.5A; 1W; TO92
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Microchip 1091
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AUD 1.319
Multiples of: 1

530 mA20 V1.3 OhmsN - Channel 500 mV- 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel5 V Enhancement  
IRLML6346


SOT-23 MOSFETs ROHS
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Leiditech 1076
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AUD 0.0941
Multiples of: 5

                   
AOD417-MS


30V 40A 34.7W 18mΩ@10V,15A 2.5V@250uA 158pF@15V P Channel 1345pF@15V 12.5nC@4.5V -55℃~+150℃@(Tj) TO-252 MOSFETs ROHS
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MSKSEMI 1067
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AUD 0.1686
Multiples of: 5

                   
NCE65T360K


MOSFET N Trench 650V 11.5A (Tc) 4V @ 250uA 360 mΩ @ 7A,10V TO-252-2 (DPAK) RoHS
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NCE Power 863
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AUD 0.8398
Multiples of: 1

                   
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